| |
|
 |
Renesas Electronics Corporation |
| Part No. |
RJP65S08DWA-00#W0
|
| Description |
IGBT 650V 200A Wafer
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP65S08DWT-80#X0
|
| Description |
IGBT 650V 200A Chip
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP65S08DWT-00#X0
|
| Description |
IGBT 650V 200A Chip
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP1CS08DWT-80#X0
|
| Description |
IGBT 1250V 200A Chip
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP1CS08DWS-80#W0
|
| Description |
IGBT 1250V 200A Sawn
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| Part No. |
BUK444-200 BUK444-200A BUK444-200B BUK444
|
| Description |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
|
| File Size |
76.65K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP65S08DWA-80#W0
|
| Description |
IGBT 650V 200A Wafer
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP1CS08DWA-80#W0
|
| Description |
IGBT 1250V 200A Wafer
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
RJP65S08DWS-80#W0
|
| Description |
IGBT 650V 200A Sawn
|
| Tech specs |
|
|
|
Official Product Page
|
|
Bom2Buy.com
Price and Availability
|
