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NXP Semiconductors N.V.
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Part No. |
PBLS6021D
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OCR Text |
...= - 5 v; i c =0a - - - 100 na h fe dc current gain v ce = - 2 v; i c = - 100 ma 180 285 - v ce = - 2 v; i c = - 500 ma [1] 150 255 - v ce = ...110 - 170 mv i c = - 1.5 a; i b = - 100 ma [1] - - 165 - 260 mv r cesat collector-emitter saturation... |
Description |
60 V, 1.5 A PNP BISS loadswitch 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
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File Size |
102.42K /
16 Page |
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SANYO
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Part No. |
EC3H11B
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OCR Text |
...i c =0 10 m a dc current gain h fe v ce =1v, i c =5ma 100 160 gain-bandwidth product f t 1v ce =1v, i c =5ma 4.5 6.0 ghz f t 2v ce =3v, i c ...110-8534 japan ordering number : enn7325 ec3h11b package dimensions unit : mm 2183 [ec3h11b] d2502 t... |
Description |
Ultrahigh-Frequency Transistors
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File Size |
37.44K /
7 Page |
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it Online |
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Panasonic
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Part No. |
2SC3526H
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OCR Text |
...orward current transfer ratio h fe v ce = 5 v, i c = 100 ma 20 ? collector-emitter saturation voltage v ce(sat) i c = 150 ma, i b ...110 ma, f = 200 mhz 350 collector output capacitance c ob v cb = 30 v, i e = 0, f = 1 mhz ... |
Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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File Size |
72.70K /
3 Page |
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it Online |
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Price and Availability
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