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For fr5 Found Datasheets File :: 223 Search Time::1.375ms
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				Fujitsu, Ltd.
Part No.	BC847CDW1T1
OCR Text	...l device dissipation per device fr5 board (note 1.) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = ...
Description	TRANSISTOR \| BJT \| PAIR \| NPN \| 45V V(BR)CEO \| 100MA I(C) \| SOT-363 晶体管\|晶体管\|一对\|叩\| 45V的五（巴西）总裁\| 100mA的一（c）\|的SOT - 363
File Size	115.68K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BC846AWT1-D
OCR Text	...x unit total device dissipation fr5 board, (1) t a = 25 c p d 150 mw thermal resistance, junction to ambient r ja 833 c/w total device dissipation p d 2.4 mw/ c junction and storage temperature t j , t stg 55 to +150 c device marking...
Description	General Purpose Transistors NPN Silicon
File Size	101.66K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BAW56LT1-D
OCR Text	...x unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d...
Description	Monolithic Dual Switching Diode Common Anode
File Size	47.42K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBT3906LT1-D
OCR Text	...x unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d ...
Description	General Purpose Transistor PNP Silicon
File Size	99.45K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BC856 BC857
OCR Text	...x unit total device dissipation fr5 board, (note 1.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (note 2.) t a = 25 c derate abo...
Description	General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶体通用硅晶体管进步党（- 65V的通用型硅晶体管进步党 General Purpose Transistor PNP Silicon(-45V??????PNP?朵?绠?
File Size	112.98K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BC856ALT1-D
OCR Text	...x unit total device dissipation fr5 board, (note 1.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (note 2.) t a = 25 c derate abo...
Description	General Purpose Transistors PNP Silicon
File Size	110.02K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBD6100LT1-D MMBD6100LT3
OCR Text	...t p d total device dissipation, fr5 board (1) t a = 25 c derate above 25 c 225 1.8 mw mw/ c r ja thermal resistance, junction to ambient 556 c/w p d total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c 3...
Description	Monolithic Dual Switching Diode Small Signal DL Diode
File Size	50.19K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBZ5V6ALT1-D
OCR Text	...atts total power dissipation on fr5 board (note 2.) @ t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r q ja 556 c/w total power dissipation on alumina substrate (note 3.) @ t a = 25 c der...
Description	24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT-23 Dual Common Anode Zeners for ESD Protection
File Size	74.97K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBD2837L MMBD2838L MMBD2837LT1-D
OCR Text	...x unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d...
Description	Small Signal Switching Diode Monolithic Dual Switching Diodes
File Size	46.41K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBT918LT1-D
OCR Text	...x unit total device dissipation fr5 board, (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p ...
Description	VHF/UHF Transistor NPN Silicon
File Size	37.37K / 4 Page	View it Online	Download Datasheet

For fr5 Found Datasheets File :: 223 Search Time::1.375ms
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