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    APT8014JLL

Advanced Power Technology
Part No. APT8014JLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 800 42 168 30 40 595 4.76 300 42 50 -55 to 150 (Repetitive and Non-Repe...D = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 42 0.140 100 500 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.73K  /  2 Page

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    APT8014L2FLL

ADPOW[Advanced Power Technology]
Part No. APT8014L2FLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 52 208 30 40 890 7.12 300 52 50 (Repetitive and Non-Repetitive) 1 4 ...d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitanc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.75K  /  2 Page

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    APT8014L2LL

ADPOW[Advanced Power Technology]
Part No. APT8014L2LL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 52 208 30 40 890 7.12 300 52 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/C C Amps mJ -55 to 150 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.58K  /  2 Page

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    APT8018 APT8018L2VR APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018 APT8018L2VR APT8018JN
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 800 43 172 30 40 830 6.64 300 43 50 -55 to 150 (Repetitive and Non-Repe...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.92K  /  2 Page

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 38 132 30 40 690 5.52 300 38 50 (Repetitive and Non-Repetitive) 1 4 ...d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitanc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 800 33 142 30 40 520 4.16 300 33 50 -55 to 150 (Repetitive and Non-Repe...D = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 33 0.200 100 500 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    APT8024B2FLL APT8024LFLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2FLL APT8024LFLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 31 124 30 40 565 4.52 300 31 50 (Repetitive and Non-Repetitive) 1 4 ...d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitanc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.10K  /  2 Page

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    APT8024B2LL APT8024LLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2LL APT8024LLL
OCR Text ...Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 31 124 30 40 565 4.52 300 31 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/C C Amps mJ -55 to 150 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 57.21K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repe...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

File Size 39.43K  /  2 Page

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    APT8024B2VR APT8024LVR

ADPOW[Advanced Power Technology]
Part No. APT8024B2VR APT8024LVR
OCR Text ...Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repe...D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...
Description POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 38.06K  /  2 Page

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