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  isc silicon npn power transist Datasheet PDF File

For isc silicon npn power transist Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MJ15003 MJ15004 ON1980

MOTOROLA INC
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MJ15003 MJ15004 ON1980
Description From old datasheet system
20 AMPERE power transistORS COMPLEMENTARY silicon 140 VOLTS 250 WATTS
power transistORS COMPLEMENTARY silicon 20 A, 140 V, PNP, Si, power transistOR, TO-204AA

File Size 119.38K  /  4 Page

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    2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806-T2

NEC[NEC]
Part No. 2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806-T2
Description Low frequency power amplification
silicon transistor
PNP silicon EPITAXIAL transistOR power MINI MOLD

File Size 232.71K  /  4 Page

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    NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A

California Eastern Labs
Part No. NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A
Description 7.5 V OPERATION silicon RF power LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
silicon power MOS FET

File Size 351.61K  /  8 Page

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    NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NTE6004 NTE6002 NTE6003 NTE5988 NTE5990
Description silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
silicon power Rectifier Diode / 40 Amp
silicon power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 silicon power Rectifier Diode, 40 Amp
40 A, 300 V, silicon, RECTIFIER DIODE
40 A, 200 V, silicon, RECTIFIER DIODE

File Size 25.97K  /  3 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. MIG100J7CSB1W
Description MINIATURE power RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent power Module silicon N Channel IGBT
Intelligent power Module silicon N Channel IGBT High power Switching Applications Motor Control Applications

File Size 174.48K  /  11 Page

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    ONSEMI[ON Semiconductor]
Part No. MJE1300906 MJE13009G MJE13009
Description SWITCHMODE Series npn silicon power transistors(开关模式系列npn硅功率晶体管) 12 A, 400 V, npn, Si, power transistOR, TO-220AB
12 AMPERE npn silicon power transistOR 400 VOLTS − 100 WATTS

File Size 145.32K  /  10 Page

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    HITACHI[Hitachi Semiconductor]
Part No. HAT2054M HAT2053M
Description silicon N Channel power MOSFET power Switching
silicon N Channel power MOS FET power Switching

File Size 26.47K  /  4 Page

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    S35100 R35140 S3560 S3520 S3580 S3540 R3580 1N4137 R35100 R35120 R35160 R3520 R3540 R3560 S35 S3510 S35120 S35140 S35160

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. S35100 R35140 S3560 S3520 S3580 S3540 R3580 1N4137 R35100 R35120 R35160 R3520 R3540 R3560 S35 S3510 S35120 S35140 S35160
Description silicon power Rectifier 70 A, 600 V, silicon, RECTIFIER DIODE, DO-203AB
silicon power Rectifier 70 A, 1400 V, silicon, RECTIFIER DIODE, DO-203AB
silicon power Rectifier 70 A, 1600 V, silicon, RECTIFIER DIODE, DO-203AB

File Size 118.84K  /  3 Page

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    TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977
Description DARLINGTON 8 AMPERE COMPLEMENTARY silicon power transistORS 8 A, 60 V, npn, Si, power transistOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY silicon power transistORS

File Size 218.72K  /  6 Page

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    2SD2165

NEC[NEC]
Part No. 2SD2165
Description 6 A, 100 V, npn, Si, power transistOR
npn silicon EPITAXIAL transistOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY power AMPLIFIERS AND LOW-SPEED SWITCHING
silicon power transistor

File Size 113.92K  /  5 Page

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