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For k-die Found Datasheets File :: 23272 Search Time::1.579ms
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				Elpida Memory
Part No.	EDJ5304BASE-DG-E EDJ5316BASE-8A-E EDJ5316BASE-8C-E EDJ5316BASE-AC-E EDJ5316BASE-AE-E EDJ5316BASE-AG-E EDJ5316BASE-DG-E EDJ5316BASE-DJ-E EDJ5304BASE-8A-E EDJ5308BASE-8A-E EDJ5304BASE-8C-E EDJ5304BASE-AE-E EDJ5308BASE-AE-E EDJ5304BASE-AC-E EDJ5308BASE-AC-E EDJ5308BASE-8C-E EDJ5308BASE-DG-E EDJ5304BASE-DJ-E EDJ5308BASE-DJ-E EDJ5304BASE-AG-E EDJ5308BASE-AG-E
OCR Text	k) japan printed in japan url: http://www.elpida.com ? elpida memory, inc. 2006-2007 preliminary data sheet 512m bits ddr3 sdram ...die termination (odt) for better signal quality ? synchronous odt ? dynamic odt ? asynchronous...
Description	512M bits DDR3 SDRAM
File Size	1,547.78K / 130 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	ISP1109BS ISP1109
OCR Text	...nnect to VCC(I/O) through a 3.3 k resistor open-drain output RESET_N SPEED 5 6 I I asynchronous reset input, active LOW input speed selectio...die pad AI AI AI P AO P - [1] [2] [3] [4] [5] Symbol names ending with underscore N--for...
Description	Universal Serial Bus transceiver with carkit support
File Size	250.73K / 59 Page	View it Online	Download Datasheet

				Analog Microelectronics
Part No.	AME5286
OCR Text	... - down regulators sw r freq 18 k w on off v in 5 v c in 10 m f c 2 optional c 1 680 pf r 3 25 k w in en comp gnd freq r 1 75 k w r 2 24 k w...die attach: conductive epoxy note. connect exposed pad (heat sink on the back) to gnd. dfn-8c (3mm...
Description	Rectified Step-Down Converter
File Size	554.46K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text	...H RAS CS A11 A9 J BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 32M x 8bit 1 2 3 7 8 9 VSSQ DQ7 VSS A VDD DQ0 VDDQ NC VDDQ DQ6...die (x4, x8) Package Physical Dimension ( Unit : mm ) DDR SDRAM 8.00 0.10 0.10 Max 0.80 x 8...
Description	DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size	195.42K / 18 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
OCR Text	...H RAS CS A11 A9 J BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 32M x 8bit 1 2 3 7 8 9 VSSQ DQ7 VSS A VDD DQ0 VDDQ NC VDDQ DQ6...die (x4, x8) Package Physical Dimension ( Unit : mm ) DDR SDRAM 8.00 0.10 0.10 Max 0.80 x 8...
Description	256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	241.25K / 24 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-ZLB3 K4H560438E-ZC K4H560438E-ZC_LA2 K4H560438E-ZC_LB0 K4H560438E-ZC_LB3 K4H560438E-ZCA2 K4H560438E-ZCB0 K4H560438E-ZCB3 K4H560438E-ZLA2 K4H560438E-ZLB0 K4H560438E-ZLB3 K4H560838E-ZC_LA2 K4H560838E-ZC_LB0 K4H560838E-ZC_LB3 K4H560838E-ZCA2 K4H560838E-ZCB0 K4H560838E-ZCB3 K4H560838E-ZLA2 K4H560838E-ZLB0
OCR Text	...H RAS CS A11 A9 J BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 32M x 8bit 1 2 3 7 8 9 VSSQ DQ7 VSS A VDD DQ0 VDDQ NC VDDQ DQ6...die (x4, x8) Pb-Free Package Physical Dimension ( Unit : mm ) DDR SDRAM 8.00 0.10 0.10 Max ...
Description	256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
File Size	355.74K / 23 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	LCWJDSH.EC-FRFT-5R8T-L1N2 LCWJDSH.EC-FRFT-5O8Q-L1N2 LCWJDSH.EC-FQFS-5U8X-L1N2 LCWJDSH.EC-FSFU-5H7I-L1N2 LCWJDSH.EC-FSFU-5L7N-L1N2 LCWJDSHEC
OCR Text	...te; cri (typ.) = 85; ctr = 5000 k ? farbe: wei?; cri (typ.) = 85; ctr = 5000 k ? optical efficiency (typ.): 112 lm/w (white) at 5000 k ? ...die oben genannten typbezeichnungen umfassen die bestellbaren selektionen. diese bestehen aus wenige...
Description	Technology: InGaN on Sapphire
File Size	1,127.50K / 24 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33
OCR Text	K4N51163QC-ZC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN R...Die Termination * Refresh and Self Refresh Average Refesh Period 7.8us at lower then TCASE 85xC, 3.9...
Description	512Mbit gDDR2 SDRAM
File Size	1,403.46K / 64 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
OCR Text	K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO...Die Termination * Refresh and Self Refresh Average Refesh Period 7.8us at lower then TCASE 85xC, 3.9...
Description	256Mbit gDDR2 SDRAM
File Size	1,257.74K / 73 Page	View it Online	Download Datasheet

For k-die Found Datasheets File :: 23272 Search Time::1.579ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |