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  K4S64 Datasheet PDF File

For K4S64 Found Datasheets File :: 41+       Page :: | 1 | 2 | 3 | <4> | 5 |   

    K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H K4S64323LF-DN1H-PB K4S64323LF-DN1L K4S64323LF-DN1L-PB K4S64323LF-DN75

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H K4S64323LF-DN1H-PB K4S64323LF-DN1L K4S64323LF-DN1L-PB K4S64323LF-DN75 K4S64323LF-DN75-PB K4S64323LF-DP15 K4S64323LF-DP15-PB K4S64323LF-DP1H K4S64323LF-DP1H-PB K4S64323LF-DP1L K4S64323LF-DP1L-PB K4S64323LF-DP75 K4S64323LF-DP75-PB K4S64323LF-DU15 K4S64323LF-DU15-PB K4S64323LF-SU75-PB K4S64323LF-DU1H K4S64323LF-DU1H-PB K4S64323LF-DU1L K4S64323LF-DU1L-PB K4S64323LF-DU75 K4S64323LF-DU75-PB K4S64323LF-SN K4S64323LF-SN15 K4S64323LF-SN15-PB K4S64323LF-SN1H K4S64323LF-SN1H-PB K4S64323LF-SN1L K4S64323LF-SN1L-PB K4S64323LF-SN75 K4S64323LF-SN75-PB K4S64323LF-SP15 K4S64323LF-SP15-PB K4S64323LF-SP1H K4S64323LF-SP1H-PB K4S64323LF-SP1L K4S64323LF-SP1L-PB K4S64323LF-SP75 K4S64323LF-SP75-PB K4S64323LF-SU15 K4S64323LF-SU15-PB K4S64323LF-SU1H K4S64323LF-SU1H-PB K4S64323LF-SU1L K4S64323LF-SU1L-PB K4S64323LF-SU75
Description 2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70

File Size 63.62K  /  8 Page

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HUA FENG CIRCUIT





    K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC_L75 K4S641632K-T_UC_L50 K4S641632K-T_UC_L60 K4S641632K-TUC_L50 K4S641

SAMSUNG[Samsung semiconductor]
Part No. K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC_L75 K4S641632K-T_UC_L50 K4S641632K-T_UC_L60 K4S641632K-TUC_L50 K4S641632K-TUC_L60 K4S641632K-TUC_L75 K4S640832K-TUC_L75 K4S641632K-TUC/L50 K4S641632K-TUC/L60 K4S640832K-TUC/L75 K4S641632K-TUC/L75
Description 64Mb K-die SDRAM

File Size 211.60K  /  14 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
Description 64Mb H-die SDRAM Specification

File Size 142.04K  /  14 Page

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    K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4S641632H-TL70 K4S640432H-TC K4S640432H-TC75 K4S640432H-TL75 K4S640832H

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronics
Part No. K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4S641632H-TL70 K4S640432H-TC K4S640432H-TC75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TC60 K4S641632H-TC70 K4S641632H-TC75 K4S641632H K4S640432H-UL75 K4S640832H-UL75 K4S640432H-UC75 K4S640832H-UC75
Description D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS

File Size 142.21K  /  14 Page

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    K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK

File Size 142.44K  /  14 Page

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    K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC7

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC70 K4S643232C-TC55 K4S643232C-TC80 K4S643232C-TC60 K4S643232C-TL60 K4S643232C-TL70 V62C5181024LL-70P K4S643232C-TL10
Description ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,165.47K  /  43 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S64323LH-FC1L K4S64323LH-FC60 K4S64323LH-FC75 K4S64323LH-FE1H K4S64323LH-FE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S64323LH-FC1L K4S64323LH-FC60 K4S64323LH-FC75 K4S64323LH-FE1H K4S64323LH-FE1L K4S64323LH-FE75 K4S64323LH-FF1H K4S64323LH-FF1L K4S64323LH-FF60 K4S64323LH-FF75 K4S64323LH-FG1H K4S64323LH-FG1L K4S64323LH-FG60 K4S64323LH-FG75 K4S64323LH-FL1H K4S64323LH-FL1L K4S64323LH-FL60 K4S64323LH-FL75 K4S64323LH-FN1H K4S64323LH-FN1L K4S64323LH-FN60 K4S64323LH-FN75 K4S64323LH-HC1H K4S64323LH-HC1L K4S64323LH-HC60 K4S64323LH-HC75 K4S64323LH-HE1H K4S64323LH-HE1L K4S64323LH-HE60 K4S64323LH-HE75 K4S64323LH-HF1H K4S64323LH-HF1L K4S64323LH-HF60 K4S64323LH-HF75 K4S64323LH-HG1H K4S64323LH-HG1L K4S64323LH-HG60 K4S64323LH-HG75 K4S64323LH-HL1H K4S64323LH-HL1L K4S64323LH-HL60 K4S64323LH-HL75 K4S64323LH-HN1H K4S64323LH-HN1L K4S64323LH-HN60 K4S64323LH-FE60 K4S64323LH-FF1H0 K4S64323LH-FF1L0 K4S64323LH-FF750 K4S64323LH-FC1H0 K4S64323LH-FN1L0 K4S64323LH-HL1L0
Description 2M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Dual Rail-To-Rail Micropower Operational Amplifier 8-PDIP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-TSSOP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 12k × 32Bit的4银行0FBGA移动SDRAM

File Size 139.23K  /  12 Page

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    K4S561632N K4T56163QI K4H510838F K4S280832O K4H561638N K4T56163QN K4S561632J K4S560432N KS641632N K4H641638N K4T28163QO

Samsung semiconductor
http://
Part No. K4S561632N K4T56163QI K4H510838F K4S280832O K4H561638N K4T56163QN K4S561632J K4S560432N KS641632N K4H641638N K4T28163QO K4S640832N K4H560838N K4H560438N K4H281638O
Description Consumer Memory

File Size 435.87K  /  15 Page

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    K4T1G164QE K4T1G164QF K4T51163QG K4T51163QI K4T56163QN K4T1G084QE K4T1G084QF K4D263238K K4H510838G K4H511638G K4S641632N

Samsung semiconductor
Part No. K4T1G164QE K4T1G164QF K4T51163QG K4T51163QI K4T56163QN K4T1G084QE K4T1G084QF K4D263238K K4H510838G K4H511638G K4S641632N K4S281632K K4T51043QI K4S560832J K4S561632J K4B2G1646B K4B2G1646C K4S560432J K4H511638F K4B2G0846B K4B2G0846C K4T51083QG K4T51083QI K4H561638J K4B1G0846E K4B1G1646E K4H560838J K4J10324KE K4S281632O
Description Consumer Memory

File Size 435.94K  /  15 Page

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Part: K4S640832D-TL1H
Maker: SAMSUNG(三星)
Pack: TSOP
Stock: 60
Unit price for :
    50: $24.00
  100: $22.80
1000: $21.60

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