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    K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DI

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DIB0 K9F1208U0A-FCB0 K9F1208U0A-FIB0 K9F1208U0A-HCB0 K9F1208U0A-HIB0 K9F1208U0A-VIB0 K9F1216U0A-YCB0 K9F1216U0A-DIB0 K9F1216U0A-HIB0 K9F1216U0A-PCB0 K9F1216Q0A-HIB0 K9F1216Q0A-DCB0 K9F1216Q0A-HCB0
OCR Text ...ve solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device...
Description 64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V

File Size 805.26K  /  45 Page

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    K9F1208U0A K9F1216U0A

SAMSUNG[Samsung semiconductor]
Part No. K9F1208U0A K9F1216U0A
OCR Text ...ve solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device...
Description 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

File Size 957.56K  /  45 Page

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    K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0
OCR Text ...ve solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250s and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle t...
Description 512K x 8 bit NAND Flash Memory
4M x 8 Bit NAND Flash Memory

File Size 555.63K  /  27 Page

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    NEC Electron Devices
Part No. UPD78P0308KL-T
OCR Text ...n inside frames. Products in mass production Products under development Y subseries products are compatible with I2C bus specification. Control 100-pin 100-pin 100-pin 100-pin 80-pin 80-pin 80-pin 64-pin 64-pin 64-pin 64-pin 64-pin 64-pi...
Description MICROCONTROLLER,8-BIT,UPD78K0 CPU,CMOS,LLCC,100PIN,CERAMIC
From old datasheet system

File Size 544.71K  /  70 Page

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    K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M
OCR Text ...ve solution for the solid state mass storage market. A program operation can be performed in typical 300s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 devi...
Description 64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 725.13K  /  40 Page

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    K9F1G08Q0A K9F1G08U0A K9F1G08Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0A K9F1G08U0A K9F1G08Q0M
OCR Text ...ve solution for the solid state mass storage market. A program operation can be performed in typical 300s on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read o...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 673.54K  /  37 Page

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    K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
OCR Text ...ve solution for the solid state mass storage market. A program operation can be performed in typical 300s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 devi...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata

File Size 712.11K  /  38 Page

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    K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M
OCR Text ...ve solution for the solid state mass storage market. A program operation can be performed in typical 300s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 devi...
Description FLASH MEMORY

File Size 597.88K  /  38 Page

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    K9T1G08U0M

SAMSUNG[Samsung semiconductor]
Part No. K9T1G08U0M
OCR Text ...ve solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 50ns...
Description 128M x 8 Bits NAND Flash Memory

File Size 878.09K  /  38 Page

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    HY27UF081G HY27UF081G2M-V HY27UF081G2M-VCB HY27UF081G2M-F HY27UF081G2M-TCS HY27UF081G2M-TEP HY27UF081G2M-TIB HY27LF081G2

HYNIX[Hynix Semiconductor]
Part No. HY27UF081G HY27UF081G2M-V HY27UF081G2M-VCB HY27UF081G2M-F HY27UF081G2M-TCS HY27UF081G2M-TEP HY27UF081G2M-TIB HY27LF081G2M-TCP HY27LF081G2M-TEB HY27LF081G2M-TES HY27LF081G2M-TIP HY27LF081G2M-TMB HY27UF081G2M-T HY27UF081G2M-TCP HY27UF081G2M-TEB HY27UF081G2M-TES HY27UF081G2M-TIP HY27UF081G2M-TIS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF081G2M-TPCP HY27UF081G2M-TPCS HY27UF081G2M-TPEB HY27UF081G2M-TPIP HY27UF081G2M-TPIS HY27UF081G2M-TPMB HY27UF081G2M-TPMP HYB27UF081GB2M-T HYB27UF081GB2M-TCB HYB27UF081GB2M-TCP HYB27UF081GB2M-TCS HYB27UF081GB2M-TEB HYB27UF081GB2M-TEP HYB27UF081GB2M-TES HYB27UF081GB2M-TIP HYB27UF081GB2M-TIS HYB27UF081GB2M-TMP HYB27UF081GB2M-TPCS HYB27UF081GB2M-TPEB HYB27UF081GB2M-TPEP HYB27UF081GB2M-TPES HYB27UF081GB2M-TPIP HYB27UF081GB2M-TPIS HYB27UF081GB2M-TPMP HYB27UF081GB2M-TPMS HYB27UF081GB2M-V HYB27UF081GB2M-VCB HYB27UF081GB2M-VCP HYB27UF081GB2M-VCS HY27UF081G2M-TCB HY27UF081G2M HY27UF081G2M-TPCB HY27UF081G2M-VCP HY27UF081G2M-TPEP HY27UF081G2M-TPES HY27UF081G2M-TPMS HY27UF081G2M-TPIB HY27LF081G2M-TCS HY27LF081G2M-TPCP HY27LF081G2M-VCP HY27LF081G2M-VEB HY27LF081G2M-VEP HY27LF081G2M-TCB HY27LF081G2M-TEP HY27LF081G2M-TIB HY27LF081G2M-TIS HY27LF081G2M-TMP
OCR Text ... - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compati...market. The memory is divided into blocks that can be erased independently so it is possible to pres...
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

File Size 474.55K  /  48 Page

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