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					Advanced Micro Devices, Inc.
Part No.	29LV160M AM29LV160MT100EI AM29LV160MT100FI AM29LV160MT100PCI AM29LV160MT100WAI
OCR Text	...abit (2 m x 8-bit/1 m x 16-bit) mirrorbit tm 3.0 volt-only boot sector flash memory data sheet distinctive characteristics architectural advantages
Description	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
File Size	1,056.58K / 60 Page	View it Online	Download Datasheet

					Advanced Micro Devices, Inc.
Part No.	AM29LV256MH113R AM29LV256MH123R AM29LV256MH123RPGI AM29LV256ML123RPGI AM29LV256ML123RFI AM29LV256ML123REI AM29LV256MH123REI
OCR Text	...it (16 m x 16-bit/32 m x 8-bit) mirrorbit tm 3.0 volt-only uniform sector flash memory with versatilei/o tm control distinctive characteristics architectural advantages
Description	256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
File Size	630.04K / 70 Page	View it Online	Download Datasheet

					Advanced Micro Devices, Inc.
Part No.	AM29LV256MH40FF L256ML113RI AM29LV256MH30FF AM29LV256MH40EI AM29LV256MH40EF AM29LV256MH30FI AM29LV256MH30EI AM29LV256MH30EF L256ML123RI L256MH123RI L256ML113RF L256MH113RI L256MH123RF AM29LV256ML123RPGF AM29LV256ML123PGF AM29LV256ML123PGI AM29LV256MH123RPGF AM29LV256MH113PGI AM29LV256MH113PGF AM29LV256ML113RPGF AM29LV256ML113RPGI AM29LV256MH113RPGF AM29LV256ML113PGF AM29LV256ML113PGI AM29LV256ML103PGF AM29LV256ML123REF AM29LV256ML123FF AM29LV256ML100EI AM29LV256ML100FI AM29LV256ML100PGF AM29LV256ML103EI AM29LV256ML103RFI AM29LV256ML113RFI AM29LV256ML103EF AM29LV256ML103FF AM29LV256ML103FI AM29LV256ML113FI AM29LV256ML103RPGF AM29LV256ML123FI AM29LV256ML103RFF AM29LV256ML100EF AM29LV256ML113EF AM29LV256ML103PGI AM29LV256ML103REI AM29LV256ML103RPGI AM29LV256ML113FF AM29LV256ML123EI AM29LV256ML113REF AM29LV256ML123EF AM29LV256ML100FF AM29LV256ML100PGI AM29LV256ML103REF AM29LV256ML113EI AM29LV256ML113REI AM29LV256MH103EI AM29LV256MH103FI AM29LV256MH103PGF AM29LV256MH103REI AM29LV256MH103RFI AM29LV256MH103EF AM29LV256MH103PGI AM29LV256MH103RFF AM29LV256MH103RPGF AM29LV256MH103FF AM29LV256MH103REF AM29LV256MH103RPGI AM29LV256MH123EI AM29LV256MH113EI AM29LV256MH100EI AM29LV256MH110FI AM29L
OCR Text	...t (16 m x 16-bit /32 m x 8-bit) mirrorbit tm 3.0 volt-only uniform sector flash memory with versatilei/o tm control distinctive characteristics architectural advantages
Description	256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 110 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
File Size	548.75K / 69 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc.
Part No.	S73WS-P S75WS256NDGBFWLH2 S75WS256NDGBFWLH0 S75WS256NDGBFWLJ0 S75WS256NDGBFWLJ2 S75WS256NDGBFWLH3 S75WS256NDFBAWLH0 S75WS256NDFBAWLJ0 S75WS256NDFBAWLJ2 S75WS256NDFBAWLH3 S75WS256NDFBAWLH2 S75WS256NDFBFWLH3 S75WS256NDGBAWSJ3 S75WS256NDGBFWLJ3 S75WS256NDGBAWSH3
OCR Text	...h process technology p = 90 nm, mirrorbit tm technology code flash density 512 = 512mb product family s73ws stacked products (mcp) 1.8 v nor flash and mobile dram table 4.1 character position descriptions (sheet 1 of 2) character 12 ch...
Description	Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84 Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
File Size	112.33K / 10 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
OCR Text	mirrorbit tm flash family s29gl256m, s29gl128m, s29gl064m, s29gl032m 256 megabit, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive chara...
Description	MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
File Size	2,173.74K / 160 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29AL016M90TFIR23 S29AL016M90FAI020 S29AL016M90FFIR22 S29AL016M90FAI010 S29AL016M10BFIR12 S29AL016M10BFI020 S29AL016M10BAI020 S29AL016M90TAI013 S29AL016M10FAI010 S29AL016M10FAI013 S29AL016M10BFIR23 S29AL016M10FAI020 S29AL016M10BFIR22 S29AL016M10FAI012 S29AL016M90BAI013 S29AL016M10FAIR10 S29AL016M90TAIR22 S29AL016M10BFIR10 S29AL016M90BFIR10
OCR Text	...ector flash memory featuring mirrorbit tm technology data sheet distinctive characteristics architectural advantages
Description	Hex Schmitt Trigger; Package: SOEIAJ-14; No of Pins: 14; Container: Rail; Qty per Container: 50 Quad Line EIA-232D Driver; Package: SOEIAJ-14; No of Pins: 14; Container: Rail; Qty per Container: 50 Quad 2-Channel Analog Multiplexer/Demultiplexer; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50 BCD-to-7 Segment Latch/Decoder/Driver for Liquid Crystals; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50 ANA INTRFCE QUAD DRVR; Package: SOEIAJ-14; No of Pins: 14; Container: Rail; Qty per Container: 50 Dual Binary to 1-of-4 Decoder/Demultiplexer; Package: SOIC 16 LEAD; No of Pins: 16; Container: Rail; Qty per Container: 48 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 Dual Binary to 1-of-4 Decoder/Demultiplexer; Package: SOIC 16 LEAD; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2500 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 Dual Binary to 1-of-4 Decoder/Demultiplexer; Package: PDIP-16; No of Pins: 16; Container: Rail; Qty per Container: 500 1M X 16 FLASH 3V PROM, 100 ns, PBGA48 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 Dual Binary to 1-of-4 Decoder/Demultiplexer ; Package: PDIP-16; No of Pins: 16; Container: Rail; Qty per Container: 500 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
File Size	1,079.94K / 59 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI023 S29GL128P12FAI023 S29GL128P11FAI023 S29GL01GP13FAI023 S29GL01GP11TFIV10 S29GL01GP11TFIV13 S29GL01GP11TFIV12 S29GL128P11FFI022 S29GL128P11FFI020 S29GL128P11FAI010 S29GL128P11FAI022 S29GL128P11FAI012 S29GL128P12FAIV10 S29GL01GP12TAI012 S29GL01GP13FAI022 S29GL128P11TFI022 S29GL128P13TFIV10 S29GL128P13TFIV12 S29GL01GP13TFIV13 S29GL01GP12FFIV10 S29GL01GP13FFIV13 S29GL128P11FFIV13
OCR Text	mirrorbit tm flash family s29gl-p mirrorbit tm flash family cover sheet s29gl01gp, s29gl512p, s29gl256p, s29gl128p 1 gigabit, 512 megabit , 2 56 megabit an d 128 megabit 3.0 volt-only page mode flash memory featuring 90 nm mirrorbit proc...
Description	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
File Size	992.82K / 71 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAIR82 S29GL064M90FBIR82 S29GL064M90FCIR82 S29GL064M90TAIR82 S29GL064M90TBIR82 S29GL064M90TCIR82 S29GL064M90TCIR00 S29GL064M90TCIR02 S29GL064M90TCIR92 S29GL064M90TCIR10 S29GL064M90TBIR73 S29GL064M90TBIR90 S29GL064M90TBIR92 S29GL032M S29GL064M90BCIR02 S29GL064M90TCIR40 S29GL064M90TCIR43 S29GL064M90TBIR40 S29GL064M90TBIR43 S29GL064M90BCIR70 S29GL064M90TAIR73
OCR Text	mirrorbit tm flash family s29gl256m, s29gl128m, s29gl064m, s29gl032m 256 megabit, 128 megabit, 64 megabit, and 32 megabit, 3.0 volt-only page mode flash memory featuring 0.23 m mirrorbit process technology data sheet this product fa...
Description	256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
File Size	1,681.87K / 116 Page	View it Online	Download Datasheet

					Advanced Micro Devices, Inc.
Part No.	AM29LV256MH113RPGI
OCR Text	...it (16 m x 16-bit/32 m x 8-bit) mirrorbit tm 3.0 volt-only uniform sector flash memory with versatilei/o tm control distinctive characteristics architectural advantages
Description	256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
File Size	624.65K / 70 Page	View it Online	Download Datasheet

					Advanced Micro Devices
Part No.	AM29LV6402MH100RPHI AM29LV6402MH110RPHI AM29LV6402ML100RPHI AM29LV6402ML110RPHI L6402ML11RI L6402MH10RI
OCR Text	...it (4 m x 32-bit/8 m x 16-bit) mirrorbit ? 3.0 volt-only uniform sector flash memory with versatile i/o? control distinctive characterist...tm control ? device generates data output voltages and tolerates data input voltages on the ce# a...
Description	128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit?/a> 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O?/a> Control 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O Control
File Size	484.00K / 57 Page	View it Online	Download Datasheet

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