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  p-hemt Datasheet PDF File

For p-hemt Found Datasheets File :: 479    Search Time::1.812ms    
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    HMC-AUH23209

Hittite Microwave Corporation
Part No. HMC-AUH23209
OCR Text ... ps output voltage level [3] 8v p-p additive jitter (rms) 0.4 ps 1 db output gain compression point at 20 ghz 16.5 dbm output power 20 ghz @...hemt mmic modulator driver amplifier, dc - 43 ghz microwave & optical driver amplifiers - chip 4 4...
Description GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz

File Size 398.53K  /  10 Page

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    TC2623

United Monolithic Semiconductors
Part No. TC2623
OCR Text ....s. route dpartementale 128 - b.p.46 - 91401 orsay cedex france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 12ghz super low noise hemt algaas/gaas field effect transistor description the tc2623 is a x/ku band schottky barrier h...
Description 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

File Size 87.11K  /  6 Page

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    FSX017X

Eudyna Devices Inc
Part No. FSX017X
OCR Text ...C/W Output Power at 1 dB G.C.P. P1dB f = 4GHz VDS = 8V, f = 8GHz 20.5 IDS = 0.7 IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 10.0 IDS...HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAG Total Power Dissipation (W...
Description GaAs FET & HEMT Chips

File Size 85.55K  /  4 Page

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    HMC-AUH31711

Hittite Microwave Corporation
Part No. HMC-AUH31711
OCR Text p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone:...hemt mmic medium power amplifier, 81 - 86 ghz v04.0511 general description features functional diag...
Description GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz

File Size 325.82K  /  6 Page

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    HMC-AUH31811

Hittite Microwave Corporation
Part No. HMC-AUH31811
OCR Text p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone:...hemt mmic medium power amplifier, 71 - 76 ghz v06.0511 general description features functional diag...
Description GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz

File Size 329.28K  /  6 Page

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    NPT2022 NPT2022-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. NPT2022 NPT2022-15
OCR Text ... 100w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 19 - db p sat s a t u r a t e d o u tp ut p o w e r - 50.5 - d bm ? sat efficiency at s a t u ...
Description Gallium Nitride 48V, 100W, DC-2 GHz HEMT

File Size 2,594.15K  /  10 Page

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    CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P
OCR Text ...tics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see ord...
Description    HiRel K-Band GaAs Super Low Noise HEMT

File Size 537.83K  /  7 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. ESN35A090IV EGN35A090IV
OCR Text ...urrent Channel Temperature r P Symbol VDS IGF IGR Tch im l e Condition RG=5 RG=5 Vp VGDO P3dB d GL Rth a in Rating Limit ...HEMT Output Power vs. Frequency VDS=50V IDS(DC)=500mA Output Power and Drain Efficiency vs. Input P...
Description High Voltage - High Power GaN-HEMT

File Size 104.70K  /  4 Page

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    MAGX-000912-500L00 MAGX-000912-SB3PPR

M/A-COM Technology Solutions, Inc.
Part No. MAGX-000912-500L00 MAGX-000912-SB3PPR
OCR Text ...standard operating conditions, p out = 500 w (peak) parameter test conditions symbol min. typ. max. units dc characteristi...hemt pulsed power transistor 500 w peak, 960 to 1215 mhz, 128 s pulse, 10% duty rev. v1 m...
Description GaN on SiC Depletion-Mode Transistor Technology

File Size 829.17K  /  6 Page

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    ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220JT 9337CKE100M C2012X7R2A103M EEA-FC1E100 ERJ-8GEYJ510 ERJ-8GEYJ100V 28

RF Micro Devices
Part No. ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220JT 9337CKE100M C2012X7R2A103M EEA-FC1E100 ERJ-8GEYJ510 ERJ-8GEYJ100V 28F0181-1SR-10 35F0121-1SR-10 RF3928TR13 ERJ-6GEYJ120V ERJ-3GEY0R00 RF3928PCBA-410 RF3928S2 RF3928SB RF3928SQ RF3928SR ATC100B620JT 0805G102M101NT
OCR Text ...tisfy the following expression: p diss < (t j ? t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. ...hemt devices are esd sensitive ma terials. please use proper esd pr ecautions when handling devices ...
Description 280W GaN WIDEBAND PULSED POWER

File Size 929.00K  /  11 Page

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