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    MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
Part No. MRF373ASR1 MRF373AR1 MRF373A
OCR Text RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and indus...STYLE 1 NI-360 MRF373AR1 G CASE 360C-05, STYLE 1 NI-360S MRF373ASR1 S MAXIMUM RATINGS Rati...
Description MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 332.33K  /  8 Page

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    GC4320 GC4321 GC4322 GC4323

Microsemi Corporation
Part No. GC4320 GC4321 GC4322 GC4323
OCR Text ...he GC4300 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending ...style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes ...
Description CONTROL DEVICES High Speed NIP Diodes

File Size 171.50K  /  4 Page

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    MRF10500 MRF10501

MOTOROLA[Motorola, Inc]
Part No. MRF10500 MRF10501
OCR Text RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10500/D Microwave Pulse Power Transistors . . . designed for 1025 -...STYLE 1 MRF10500 CASE 355H-01, STYLE 1 MRF10501 MAXIMUM RATINGS Rating Collector-Emitter Volt...
Description MICROWAVE POWER TRANSISTORS

File Size 104.24K  /  4 Page

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    MRF1090MA MRF1090MX MRF1090MB

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF1090MA MRF1090MX MRF1090MB
OCR Text RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1090MA/D Microwave Pulse Power Transistors Designed for Class B and...STYLE 1 (MRF1090MA) CASE 332A-03, STYLE 1 (MRF1090MB) THERMAL CHARACTERISTICS Characteristic ...
Description MICROWAVE POWER TRANSISTORS

File Size 102.92K  /  6 Page

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    MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3
OCR Text RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with...STYLE 1 NI - 780 MRF21060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060LSR3 Table 1. Maximum R...
Description RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs

File Size 373.40K  /  8 Page

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    MRF1150MA MRF1150MB

MOTOROLA[Motorola, Inc]
Part No. MRF1150MA MRF1150MB
OCR Text RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1150MA/D Microwave Pulse Power Transistors Designed for Class B and...STYLE 1 (MRF1150MA) CASE 332A-03, STYLE 1 (MRF1150MB) THERMAL CHARACTERISTICS Characteristic ...
Description MICROWAVE POWER TRANSISTORS

File Size 126.52K  /  5 Page

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    MRF21060R3 MRF21060SR3 MRF21060

Freescale (Motorola)
Motorola, Inc
Part No. MRF21060R3 MRF21060SR3 MRF21060
OCR Text RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz...STYLE 1 NI - 780 MRF21060R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060SR3 MAXIMUM RATINGS Rat...
Description 2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors

File Size 547.55K  /  8 Page

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    MHL8015 MHL8018

Motorola, Inc.
Part No. MHL8015 MHL8018
OCR Text RF Line UHF Linear Amplifier Designed for linear amplifier applications in 50 ohm systems requiring wide bandwidth, low noise, and low d...STYLE 2 MHL8018, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating DC Su...
Description UHF Lineat Amplifier

File Size 49.15K  /  4 Page

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