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  rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 593    Search Time::1.484ms    
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    STH8NB90FI STH8NB90 H8NB90FI STW8NB90

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STH8NB90FI STH8NB90 H8NB90FI STW8NB90
OCR Text ...ditions VDD = 450 V, ID = 3.5 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 400V, ID = 9A, VGS = 10V Min. Typ. 25 12 46 12.5 18 7...122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.35...
Description N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh MOSFET
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩ MOSFET
N-CHANNEL MOSFET

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    AD9623 AD9621

Analog Devices
Part No. AD9623 AD9621
OCR Text ...XSK) VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125C RG = 5 , non-repetitive TC = 25C G C...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description Wideband Voltage Feedback Amplifier

File Size 42.87K  /  2 Page

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    UPA1912 UPA1912TE PA1912 D13806EJ2V0DS00

NEC[NEC]
Part No. uPA1912 uPA1912TE PA1912 D13806EJ2V0DS00
OCR Text ... V ID = -2.5 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -4.5 A VGS = -4.0 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 10 A / s -0.5 3 -0.90 9.3 39 40 53 810 241 122 304 532 406 796 5.6 2.2 2.6 0.86 1.1 4.3 50 52 70 MIN. TYP. MAX...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 58.14K  /  8 Page

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    STH10NA50 STH10NA50FI STW10NA50

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STH10NA50 STH10NA50FI STW10NA50
OCR Text ... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 ...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
N-CHANNEL Power MOS MOSFET

File Size 241.67K  /  11 Page

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    STH10NC60FI STW10NC60 STH10NC60

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
Part No. STH10NC60FI STW10NC60 STH10NC60
OCR Text ...nditions VDD = 300V, ID = 4.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 9.0 A, VGS = 10V Min. Typ. 20 16 55 4.5 31 ...122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.35...
Description N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET

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    2SK3360 D14331EJ1V0DS00

NEC[NEC]
Part No. 2SK3360 D14331EJ1V0DS00
OCR Text ...le 1 % 2. Starting Tch = 25 C, RG = 25 , VGS = 20 V0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.57 62.5 C/W C/W The information in this document is subject to change without notice. Before using th...
Description From old datasheet system
SWITCHING N-CHANNEL POWER MOS FET INDuSTRIAL uSE

File Size 38.56K  /  4 Page

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    APT10040B2VFR APT10040LVFR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT10040B2VFR APT10040LVFR
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 25 100 1.3 5 (VG...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 2...
Description POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
RELAY SSR SPST 280VAC 10A DIN MT

File Size 39.43K  /  2 Page

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    APT10040B2VR APT10040LVR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT10040B2VR APT10040LVR
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 2...
Description POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 38.07K  /  2 Page

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    APT10045B2FLL APT10045LFLL

ADPOW[Advanced Power Technology]
Part No. APT10045B2FLL APT10045LFLL
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT pF 4335 720 129 159 19 101 10 7 32 8 ns nC Gate-Source Charge Gate-Drain (...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.79K  /  2 Page

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