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  rg-161 u Datasheet PDF File

For rg-161 u Found Datasheets File :: 755    Search Time::1.547ms    
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    APT8030JVFR

ADPOW[Advanced Power Technology]
Part No. APT8030JVFR
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 n...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.94K  /  4 Page

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    APT8030JVR

ADPOW[Advanced Power Technology]
Part No. APT8030JVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns n...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 67.66K  /  4 Page

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3050 300 150 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns n...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

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    IRL5602S IRF530S IRL5602STRR IRL5602STRL

IRF[International Rectifier]
Part No. IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text ...10 V 73 --- ID = -12A ns 53 --- RG = 6.0W, VGS = 4.5V 84 --- RD = 0.8W, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 1460 ...161) 3.90 (.153) 1.60 (.063) 1.50 (.059) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOuRCE 8.89 ...
Description -20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 169.26K  /  8 Page

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    IXST35N120B IXSH35N120B

IXYS[IXYS Corporation]
Part No. IXST35N120B IXSH35N120B
OCR Text ...5C, 1 ms VGE = 15 V, TJ = 125C, RG = 5 Clamped inductive load Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ....161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and ...
Description IGBT

File Size 81.21K  /  2 Page

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    IXTA1N100 IXTP1N100

IXYS[IXYS Corporation]
Part No. IXTA1N100 IXTP1N100
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 18 TC = 25C 6 200 3 54 -55 ... +150 150 -55 ... +150 G S D (TAB) G = Gate, S = Source, D =...161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0....
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MOSFET

File Size 45.67K  /  2 Page

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    ZXFV4089 ZXFV4089N8TA ZXFV4089N8TC ZXFV4089N8

ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
Part No. ZXFV4089 ZXFV4089N8TA ZXFV4089N8TC ZXFV4089N8
OCR Text ...ICS VCC = 5V, VEE = -5V, RF and RG = 1k , RLOAD = 1k, Tamb = 25 C unless otherwise stated. PARAMETER DC characteristics V CC Supply current...161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen ...
Description    VIDEO AMPLIFIER WITH DC RESTORATION
DC Restoration Amplifier-Not recommended for new designs
VIDEO AMPLIFIER WITH DC RESTORATION 视频放大器直流修

File Size 52.58K  /  5 Page

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    16CTQ80 16CTQ80-1 16CTQ80S 16CTQ100 16CTQ100-1 16CTQ100S 16CTQ 16CTQ060 16CTQ060-1 16CTQ060S 16CTQ080-1 16CTQ100STR 16CT

IRF[International Rectifier]
Part No. 16CTQ80 16CTQ80-1 16CTQ80S 16CTQ100 16CTQ100-1 16CTQ100S 16CTQ 16CTQ060 16CTQ060-1 16CTQ060S 16CTQ080-1 16CTQ100STR 16CTQ100STRL 16CTQ100STRR 16CTQ080STRR 16CTQ080S
OCR Text ...- speed switch irfp460 l dut rg = 25 ohm vd = 25 volt + (2) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power los...161) 3.90 (0.153) 1.60 (0.063) 1.50 (0.059) dia. 1.60 (0.063) 1.50 (0.059) dia. 11.60 (0.457) 11.40 ...
Description    SCHOTTKY RECTIFIER
RG316 COAX CABLE SMB M TO SMB M - 10 FT
RG316 COAX CABLE SMA90D TO SMA M90D - 3 FT
IEEE 1284 TO uSB PRINTER CABLE BRIDGE
80V 16A Schottky Common Cathode Diode in a TO-262 package
100V 16A Schottky Common Cathode Diode in a TO-262 package
100V 16A Schottky Common Cathode Diode in a D2-Pak package
80V 16A Schottky Common Cathode Diode in a D2-Pak package

File Size 196.22K  /  8 Page

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    IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text ... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 14N100 15N100 14N100 15N100 14N100 15N100 Maximum Ratings 1000 1000 20 30 14 15 56 60 1...161 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20...
Description HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 115.80K  /  4 Page

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    IXTN21N100 IXTK21N100

IXYS[IXYS Corporation]
Part No. IXTN21N100 IXTK21N100
OCR Text ...S = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 50 100 40 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 100 TO-264 AA TO-264 AA m...161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 ...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MegaMOSTMFETs

File Size 136.10K  /  4 Page

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