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rg-188 u Datasheet PDF File

For rg-188 u Found Datasheets File :: 261 Search Time::1.031ms
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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL IRZ24NS
OCR Text	... ) Starting TJ = 25C, L =1.0mH RG = 25, I AS = 10A. (See Figure 12) Pulse width 280s; duty cycle 2%. uses IRFZ24N data and test cond...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	(159.21 k) 59.21十一 Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.07ohm，身份证\u003d 17A条） 55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的，17A条，N沟道HEXFET功率MOSFET5V的，17A条，沟道的HEXFET功率马鞍山场效应管） 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	155.28K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ24S IRFZ24L
OCR Text	... VDD = 30V --- I D = 17A ns --- RG = 18 --- RD = 1.7, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 640 --- VGS = 0V 360 -...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET Power MOSFET
File Size	354.95K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BuK7506-30
OCR Text	... = 15 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad Decembe...
Description	TrenchMOS transistor Standard level FET 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	44.82K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBC20L IRFBC20S
OCR Text	...50V, starting TJ = 25C, L =31mH RG = 25, I AS = 2.2A. (See Figure 12) Pulse width 300s; duty cycle 2%. uses IRFBC20 data and test con...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A) Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	351.70K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBC30S IRFBC30L
OCR Text	...50V, starting TJ = 25C, L =41mH RG = 25, I AS = 3.6A. (See Figure 12) Pulse width 3000s; duty cycle 2%. uses IRFBC30 data and test co...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
File Size	358.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40FD2
OCR Text	... 27A, VCC = 480V 480 VGE = 15V, RG = 10 320 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 6.8 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 27A, VCC = 480V -- VGE = 15V, RG = 10 -- Energy losses ...
Description	INSuLATED GATE BIPOLAR TRANSISTOR WITH uLTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
File Size	381.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40uD2
OCR Text	...) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.02 2.00 Total Switching Losses (mJ) 1.98 Total Switchi...
Description	INSuLATED GATE BIPOLAR TRANSISTOR WITH uLTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)
File Size	377.91K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STS3DPF30L STS3DPFS30L
OCR Text	...nditions VDD = 15 V, ID = 1.5 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 15 V, ID = 3 A, VGS = 4.5 V Min. Typ. 15 37 5.5 1.7...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description	P-CHANNEL 30V - 0.13 OHM - 3A SO-8 STRIPFET MOSFET PLuS SCHOTTKY RECTIFIER
File Size	264.32K / 8 Page	View it Online	Download Datasheet

				Vishay Semiconductors IRF[International Rectifier]
Part No.	47CTQ020-1 47CTQ020S 47CTQ020 47CTQ020-1PBF 47CTQ020STRR 47CTQ020STRL
OCR Text	... d = 25 V olt DuT IRFP460 Rg = 25 ohm + C uRRENT M ON ITO R Fig. 8 - unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (I F(AV) / D) (see Fig. 6); Pd...
Description	20V 40A Schottky Common Cathode Diode in a D2-Pak package 20V 40A Schottky Common Cathode Diode in a TO-262 package SCHOTTKY RECTIFIER 40 Amp
File Size	127.13K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation
Part No.	FQB47P06 FQI47P06 FQB47P06TMAM002 FQI47P06Tu
OCR Text	...) VDD = -30 V, ID = -23.5 A, RG = 25 (Note 4, 5) -------- 50 450 100 195 84 18 44 110 910 210 400 110 --- ns ns ns ns nC nC...188 -4.0 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction ...
Description	60V P-Channel MOSFET 60V P-Channel QFET
File Size	717.54K / 9 Page	View it Online	Download Datasheet

For rg-188 u Found Datasheets File :: 261 Search Time::1.031ms
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