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For silicon-controlled Found Datasheets File :: 17775 Search Time::2.14ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1180 2SB1180A
OCR Text	Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A Features *...controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japa...
Description	Silicon PNP epitaxial planar type darlington
File Size	84.71K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	2SB631 2SB631K 2SD600 2SD600K
OCR Text	Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features * High breakdown voltage ...controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not...
Description	NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
File Size	114.39K / 4 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB710 2SB710A 2SB0710 2SB0710A
OCR Text	Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Features * Large collec...controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japa...
Description	Silicon PNP epitaxial planar type
File Size	76.25K / 3 Page	View it Online	Download Datasheet

				Rohm
Part No.	2SC5001
OCR Text	...cts listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products l...controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from...
Description	Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)
File Size	49.01K / 2 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SC5053
OCR Text	...cts listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products l...controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from...
Description	Medium Power Transistor (-50V/ -1A) Medium Power Transistor (-50V -1A) Medium Power Transistor (-50V, -1A)
File Size	45.95K / 2 Page	View it Online	Download Datasheet

				Broadcom ETC
Part No.	BCM3419
OCR Text	silicon tuner completes system design with Broadcom cable modem * DOCSIS(R)/EuroDOCSISTM 1.0/1.1/2.0 * Supports 64, 256, and 1024 QAM SU...Controlled Oscillator) is fully integrated with no external tank component. The BCM3419 is specifica...
Description	Advanced Direct Conversion Cable Tuner ADVANCED LOW IF DIRECT CONVERSION CABLE TUNER
File Size	63.85K / 2 Page	View it Online	Download Datasheet

				ETC
Part No.	BCM8152
OCR Text	...s. * Uses the most effective silicon economy of scale for CMOSbased devices. * Standard CMOS fabrication process. APPLICATIONS * * * *...controlled oscillator (VCO) directly to the incoming data stream. An on-chip phase detector and char...
Description	10 GBPS TRANSCEIVER WITH 10G CLOCK, BUS SKEW, AND LIMITING AMPLIFIER
File Size	125.98K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ICM7170 ICM7170AIBG ICM7170AIDG ICM7170AIPG ICM7170AMDG ICM7170IBG ICM7170IDG ICM7170IPG ICM7170MDG
OCR Text	...al, fabricated using Intersil's silicon gate CMOS LSl process. An 8-bit bidirectional bus is used for the data I/O circuitry. The clock is s...controlled by a pulse train divided down from a crystal oscillator circuit, and the frequency of the...
Description	Microprocessor-Compatible, Real-Time Clock
File Size	77.04K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * R...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * R...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

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