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46225 C3216X 20N10L C2502 6NK60 1N4448 RL103GP IRFB830
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    APG2C1-365-E

Roithner LaserTechnik GmbH
Part No. APG2C1-365-E
OCR Text ... therefor it is not possible to use a refl ow soldering process for array assembly! hot bar soldering: a hot bar soldering process is recommended when soldering apg2c1 emitters. this process will only transfer heat to the leads and av...
Description Structure: inGaN Peak Wavelength: 365nm Optical Output Power: typ. 135mW Life Time: 10.000 hours
File Size 313.52K  /  4 Page

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    VNB20N07TR-E

STMicroelectronics
Part No. VNB20N07TR-E
OCR Text ...e for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or ...
Description FULLY AUTOPROTECTED POWER MOSFET
File Size 403.56K  /  13 Page

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    HZM68MWATL-E

Renesas Electronics Corporation
Part No. HZM68MWATL-E
OCR Text ...utive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these ma...e date this document is issued. such information, however, is subject to change without any prior n...
Description Silicon Planar Zener Diode for Surge Absorb
File Size 259.90K  /  7 Page

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    Renesas Electronics Corporation
Part No. HAT2165H-EL-E HAT2165H-15
OCR Text ... parties by or arising from the use of renesas electronics products or technical information described in this document . no license, expr...e.g. artificial life support devices or systems), surgical implantations, or healthcare interventio...
Description 55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET Power Switching
Old Company Name in Catalogs and Other Documents
File Size 97.07K  /  10 Page

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