...00 0.55 150 -55 to +150
Unit v v v A A mA W
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cu...12 -5 30 90 10 typ max Unit v v v ns ns ns
Switching Time Test Circuit
PW=20s D.C.1% INPUT vR 50...
...2.5 140 150 -55 to +150
Unit v v v A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff...12 --10 --8
--300mA
300m
A
12 10
200mA
--200mA
100mA
8 6
--100mA
--6 --4 -...
...1.2 1.2 10 150 -55 to +150 Unit v v v A A A W W C C
Any and all SANYO products described or contained herein do not have specifications t...12
PC -- Tc
2SA2037 / 2SC5694
Collector Dissipation, PC -- W
10
8
6
4
2
0 0...
....2 0.8 15 150 --55 to +150 Unit v v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cu...12 10 8 6 4 2 0 0 20 40 60 80 100 120
5 7 100 IT02980
0
20
40
60
80
100
120
...
Description
Low-Power, Single/Dual-voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay TRANSISTOR | BJT | NPN | 50v v(BR)CEO | 5A I(C) | TO-251vAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50v v(BR)CEO | 5A I(C) | TO-252vAR Low-Power, Single/Dual-voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay PNP/NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon Transistors High Current Switching Applications PNP Epitaxial Planar Silicon Transistors High Current Switching Applications 5000 mA, 50 v, NPN, Si, SMALL SIGNAL TRANSISTOR
...-)2 1.0 15 150 -55 to +150 Unit v v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cu...12 10 8 6 4 2 0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- C
IT02972
PC -- Tc
2SA2...
...)1.2 1 15 150 --55 to +150 Unit v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cuto...12 10 8 6 4 2 0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- C
40
60
80
100
12...
...)1.2 1 15 150 --55 to +150 Unit v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cuto...12 10 8 6 4 2 0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- C
40
60
80
100
12...
... -4.0 500 2.0 150 -55~+150 Unit v v v A A 1 mW W 2 C C
1 Pw=100ms *2 Mounted on a 40x40x0.7 (mm) ceramic substrate
1.5
1.6 4.5
3...12.5
vIN
PW
IB1
IC vCC -25v
IB2 PW 50s DUTY CYCLE 1%
IB2 IB1 BASE CURRENT WAvEFORM 9...
...tion voltage: vCE (sat) = -0.19 v (max) High-speed switching: tf = 25 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Coll...12 50 115 25 Max -100 -100 500 -0.19 -1.10 ns v v pF Unit nA nA v
1
2001-10-29
2SA205...