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  vf1.6v Datasheet PDF File

For vf1.6v Found Datasheets File :: 86    Search Time::2.484ms    
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    hitachi
Part No. HSB123
OCR Text ...*1 Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time Note: IR C t rr Min -- -- -- -- -- -- Typ -- -...6V, RL = 50 1. Per one device. 2 HSB123 Main Characteristic 3 HSB123 Package Dimens...
Description From old datasheet system

File Size 18.59K  /  4 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MA3X703
OCR Text ...ol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V VR = 5 V IF = 500 mA IF = 10 mA VR = 0 ...6V 3V 60 50 40 30 20 10 100 10 1 0.1 -40 0 0 40 80 120 160 200 0 5 10 ...
Description Silicon epitaxial planar type

File Size 47.11K  /  2 Page

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    VND60013TR VND600

STMICROELECTRONICS[STMicroelectronics]
Part No. VND60013TR VND600
OCR Text ...SE1 IOUT2 OUTPUT2 VSENSE1 VOUT1 VF1 (*) VCC CURRENT SENSE 1 VOUT2 ISENSE2 VSENSE2 CURRENT SENSE 2 GROUND IGND (*) VFn = VCCn - V...6V ICC=20 mA (see note 1) Off State; VCC=13V; VIN=VOUT =0V IS (**) Supply current Off State; VCC=13V...
Description DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

File Size 234.08K  /  18 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MA198 MA3X198
OCR Text ...arameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time* IR Ct trr IF = 100 A IR = 100 mA VR = 40...6V 102 Non repetitive 1.6 1 1V 1.2 10 0.8 10 -1 1 0.4 10 -2 -40 ...
Description    Silicon epitaxial planar type

File Size 68.12K  /  3 Page

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    Matsshita / Panasonic
Part No. MA198
OCR Text ... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 40 V IF = 100 A IR = 100 mA VR = 6 V, f = 1 ...6V 102 Non repetitive 1.6 1 1V 1.2 10 0.8 10-1 1 0.4 10-2 -40 ...
Description Switching Diodes

File Size 68.97K  /  3 Page

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    CPH5704

SANYO[Sanyo Semicon Device]
Part No. CPH5704
OCR Text ...very Time Thermal Resistance VR VF1 VF2 IR C trr Rthj-a IR=1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2x0.8mm) 15 0.30 0.35 42 15 110 0.35 0.40 500 V V V A pF ns C/W ICBO...
Description TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications

File Size 52.36K  /  5 Page

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