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For words Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
Part No.	LC35W256EM LC35W256EM-10W LC35W256ET-10W LC35V256EM LC35V256EM-70W LC35W256ET
Description	256K (32K words x 8 bits) SRAM Control pins: NOT OE and NOT CE 256K (32K words x 8 bits) SRAM Control pins: OE and CE 256K2K字8位）的SRAM控制引脚：OE和行政长
File Size	45.71K / 6 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TC554001 TC554001AF TC554001AF-10 TC554001AF-10L TC554001AF-70 TC554001AF-70L TC554001AF-85 TC554001AF-85L TC554001AFT-10 TC554001AFT-10L TC554001AFT-70 TC554001AFT-70L TC554001AFT-85 TC554001AFT-85L TC554001ATR-10 TC554001ATR-10L TC554001ATR-70 TC554001ATR-70L TC554001ATR-85 TC554001ATR-85L TC554001AFT
Description	LJT 66C 66#22D PIN PLUG 524228字8位静态RAM 524,228 words x 8 BIT STATIC RAM 524228字8位静态RAM Circular Connector; No. of Contacts:32; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:19-32 RoHS Compliant: No 524228 words x 8 BIT STATIC RAM
File Size	407.21K / 10 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
Part No.	HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
Description	Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
File Size	105.82K / 12 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V1000BTS
Description	Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM Static RAMs (1Mb) Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
File Size	177.14K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor Emulation Technology, Inc. Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd. Xiamen Hongfa Electroacoustic Co., Ltd. ITT, Corp.
Part No.	CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56VE-1.8-GT2E CAT93C56LE-1.8-GT3E CAT93C56VE-GT2E CAT93C56VE-GT3E CAT93C56LE-1.8-GT2E CAT93C56ZD4E-1.8-GT3E CAT93C56ZD4I-1.8T2E CAT93C56ZD4A-1.8T2E CAT93C56ZD4E-1.8T2E CAT93C56ZD4I-1.8-GT2E CAT93C56ZD4I-1.8-GT3E CAT93C56ZD4I-1.8T3E CAT93C56ZD4I-GT3E CAT93C56ZD4I-GT2E CAT93C57LA-1.8T2E CAT93C57LA-1.8-GT2E CAT93C57LA-1.8T3E CAT93C57LA-1.8-GT3E CAT93C57LA-GT2E CAT93C56LI-1.8-GT3E CAT93C56LI-1.8T3E CAT93C56LI-1.8-GT2E CAT93C56LI-1.8T2E CAT93C56VA-1.8T2E CAT93C56VI-1.8T2E CAT93C56WE-1.8T2E CAT93C56LA-1.8T2E CAT93C56VE-1.8T2E CAT93C56XA-1.8T2E CAT93C56LE-1.8T2E CAT93C56WI-1.8T2E CAT93C56XE-1.8T2E CAT93C56XI-1.8T2E CAT93C56YA-1.8T2E CAT93C56YE-1.8T2E CAT93C56YI-1.8T2E CAT93C56WA-1.8T2E CAT93C56LA-1.8-GT3E CAT93C56LA-1.8-GT2E CAT93C56VI-1.8-GT2E CAT93C56WI-1.8-GT2E CAT93C56LE-1.8T3E CAT93C56VA-1.8-GT2E CAT93C56XI-1.8-GT3E CAT93C56YE-1.8-GT2E CAT93C56VI-1.8-GT3E CAT93C56XE-1.8-GT3E CAT93C56WI-1.8-GT3E CAT93C56YI-1.8-GT2E CAT93C56WA-1.8-GT2E CAT93C56YE-1.8-GT3E CAT93C56XA-1.8-GT2E CAT93C56YA-1.8-GT2E CAT93C56LA-1.8T3E CAT93C56YA-1.8-GT3E CAT93C56XE-1.8-GT2E CAT93C56YI-1.8-GT3E CAT93C56WA-1.8-GT3E CAT93C56WE-1.8-GT3E CAT93C56VA-1.8-GT3E CAT93C56
Description	The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
File Size	407.61K / 9 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	PD42S65405 PD4264405
Description	16,777,216 words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器（RAM400动态） 16,777,216 words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
File Size	258.77K / 36 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TC554001FTL-10V TC554001FTL-85V
Description	524, 288 words x 8 bit static RAM, access time 100ns 524, 288 words x 8 bit static RAM, access time 85ns
File Size	420.55K / 10 Page	View it Online	Download Datasheet

				ETC List of Unclassifed Manufacturers
Part No.	TC57512AD-15 TC57512AD-20
Description	65536 words x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 words x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
File Size	675.44K / 13 Page	View it Online	Download Datasheet

				SANYO
Part No.	LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 LC3664RSL-10
Description	Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
File Size	246.99K / 7 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL TC5565APL-10 TC5565APL-12 TC5565APL-15 TC5565AFL- TC5565
Description	65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
File Size	113.04K / 9 Page	View it Online	Download Datasheet

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