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MC74VH GP710 A1284 1N4750A B5002PFA 1020B Z0100A AD834
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  0.68mh Datasheet PDF File

For 0.68mh Found Datasheets File :: 51    Search Time::2.532ms    
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    HFU2N60 HFD2N60

SemiHow Co.,Ltd.
Part No. HFU2N60 HFD2N60
OCR Text 0 i d = 1.8 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic ...68mh, i as =2.0a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 1.8a, di/dt300a/s, v dd bv ds...
Description 600V N-Channel MOSFET

File Size 624.90K  /  8 Page

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    HFU2N65

SemiHow Co.,Ltd.
Part No. HFU2N65
OCR Text ... unrivalled gate charge : 9.0 nc (typ.) ? extended safe operating area ? lower r ds(on) : 4.5 (typ.) @v gs =10v ? 100% avalanche ...68mh, i as =1.8a , v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 1.6a, di /dt 300a/ s , v d...
Description 650V N-Channel MOSFET

File Size 845.43K  /  7 Page

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    CVA1404T

Calogic LLC
CALOGIC[Calogic, LLC]
Part No. CVA1404T
OCR Text ...Matching 50 13 MIN TYP 15 54 15 0.2 MAX 18 58 17 UNITS mA V V dB AC ELECTRICAL CHARACTERISTICS (at the cathode) Vs = 80V, CL = 8pF, DCINP...68mH R1 = 820W R2 = 47W 1U-40 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 9453...
Description Triple CRT Driver

File Size 68.33K  /  4 Page

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    HFS4N50

SemiHow Co.,Ltd.
Part No. HFS4N50
OCR Text 0 i d = 3.4 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic ...68mh, i as =3.4a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 3.4a, di/dt200a/s, v dd bv ds...
Description 500V N-Channel MOSFET

File Size 701.61K  /  7 Page

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    ACT511 ACT511US-T

Active-Semi, Inc
Part No. ACT511 ACT511US-T
OCR Text ...ons and exceeds the latest es2.0 efficiency standard with good margin. act511 integrates comprehensive protection. in case of over tempe...68mh, ee19 1 31 cy1 y capacitance, 1000pf/400v,y1 1 sec 32 u2 opto-coupler, pc817c ctr = ...
Description ActiveQR Quasi-Resonant PWM Controller

File Size 164.33K  /  4 Page

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    HFP2N60

SemiHow Co.,Ltd.
Part No. HFP2N60
OCR Text ...ics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.0 (Typ.) @VGS=10V 100% Avalanche Tested RD...68mH, IAS=2.0A, VDD=50V, RG=25, Starting TJ =25C 3. ISD2.0A, di/dt300A/s, VDDBVDSS , Starting TJ =25...
Description 600V N-Channel MOSFET

File Size 700.17K  /  8 Page

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    IRFU420B IRFR420B IRFU420BTU IRFR420BTM IRFR420BTF

FAIRCHILD[Fairchild Semiconductor]
International Rectifier
Fairchild Semiconductor, Corp.
Part No. IRFU420B IRFR420B IRFU420BTU IRFR420BTM IRFR420BTF
OCR Text ...FR420B / IRFU420B 500 2.3 1.5 8.0 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltag...68mH, IAS = 2.3A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.5A, di/dt 300A/s, VDD BVDSS, St...
Description 500V N-Channel B-FET / Substitute of IRFR420 & IRFR420A
500V N-Channel B-FET / Substitute of IRFU420 & IRFU420A
500V N-Channel MOSFET 2.3 A, 500 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 646.37K  /  9 Page

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    C&D TECHNOLOGIES INC
Part No. 22R335
OCR Text ... 70? storage temperature range ?0? to 125? absolute maximum ratings inductance resistance curie saturation tem perature temperature temperature flux coefficient coefficient tc bsat 350ppm 3900ppm 190? 325mt typical core characteristics nomi...
Description 1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR

File Size 86.48K  /  2 Page

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