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  0.8ghz Datasheet PDF File

For 0.8ghz Found Datasheets File :: 978    Search Time::5.828ms    
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    BFR280 Q62702-F1298

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SIEMENS[Siemens Semiconductor Group]
Part No. BFR280 Q62702-F1298
OCR Text ...one) at collector currents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe ...8GHz VCE = Parameter 13 dB 10V dB G 3V 16 3V G 11 10V 5V 3V 2V 10 14 2...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)

File Size 57.01K  /  7 Page

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    DES9157001 DES9157001AC DES9157001DGAZSMD SP8808 SP8808A SP8808ADG DES9157001DGAZ SP8808DG

MITEL[Mitel Networks Corporation]
Mitel Semiconductor
Part No. DES9157001 DES9157001AC DES9157001DGAZSMD SP8808 SP8808A SP8808ADG DES9157001DGAZ SP8808DG
OCR Text ...upply current Input sensitivity 0.65GHz to 2.8GHz 3.3GHz Input impedance (series equivalent) Pin Min 1 2, 3 Value Typ 69 Max 85 175 400 Units mA mV mV pF Conditions VCC = 5V RMS sinewave measured in 50 ohm system. See Figs. 3 & 4 Output...
Description 3.3GHz ÷ 8 Fixed Modulus Divider
3.3GHz ± 8 Fixed Modulus Divider
3.3GHz 8 Fixed Modulus Divider
6.5V; 345mW; 3.3GHz 8fixed modulus divider

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    MGF1801 MGF1801B 1801B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1801 MGF1801B 1801B
OCR Text ... Unit:millimeters 4MIN. 0.50.15 FEATURES * High output power at 1dB gain compression P1dB=23dBm(TYP.) * High linear power gain GLP=9dB(TYP.) * High reliability and stability @f=8GHz 0.50.15 3 @f=8GHz 2 2 APPLICATIO...
Description TAPE CARRIER MICROWAVE POWER GaAs FET
From old datasheet system

File Size 22.22K  /  3 Page

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    ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A

Nais(Matsushita Electri...
Panasonic, Corp.
OSRAM GmbH
NAIS[Nais(Matsushita Electric Works)]
Matsushita Electric Works(Nais)
Part No. ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A03 ARJ20A03X ARJ20A03Z ARJ20A12 ARJ20A12X ARJ20A12Z ARJ20A24 ARJ20A24X ARJ20A24Z ARJ20A4H ARJ20A4HX ARJ20A4HZ ARJ2203 ARJ2203X ARJ2203Z ARJ2212 ARJ2212X ARJ2212Z ARJ2224 ARJ2224X ARJ2224Z ARJ224H ARJ224HX ARJ224HZ ARJ22A03 ARJ22A03X ARJ22A03Z ARJ22A12 ARJ22A12X ARJ22A12Z ARJ22A24 ARJ22A24X ARJ22A24Z ARJ22A4H ARJ22A4HX
OCR Text ...truments market FEATURES 14.0 .551 9.00 .354 8.20 .323 14.0 .551 9.00 .354 8.20 .323 * Excellent high frequency characteristics...8GHz 3.0 45MHz 5GHz Frequency 8GHz 0.5 Isolation, dB 1.0 1.5 2.0 60 2.5 Between open contact 70 80 4...
Description    SMD RELAYS WITH 8GHz CAPABILITIES
SMD RELAYS WITH 8GHz CAPABILITIES 贴片继电器与8GHz的能

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    CXG1092 CXG1092N

SONY[Sony Corporation]
Part No. CXG1092 CXG1092N
OCR Text ...kage size: 20-pin SSOP (6.4 x 5.0 x 1.25mm) Applications Triple-band handsets using combinations of GSM900/DCS1800/PCS1900 and DECT Structur...8GHz harmonic matching network and the 900MHz trap network is dependent on the board design and comp...
Description SP5T GSM Triple-Band Antenna Switch
SP5T GSM Triple-Band Antenna Switch

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    Q62702-F1086 BFR93A

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1086 BFR93A
OCR Text ... A 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 9 10V dB 5V 3V 2V G dB 3V G 2V 7 10 6 5 1V 8 4 1V 3 6 2 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)

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    MGF1601B 1601B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1601B 1601B
OCR Text ... Unit:millimeters 4MIN. 0.50.15 FEATURES * High output power at 1dB gain compression P1dB=21.8dBm(TYP.) * High linear power gain GLP=8dB(TYP.) @f=8GHz 0.50.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplif...
Description From old datasheet system
MICROWAVE POWER GaAs FET

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    NJG1105F

NJRC[New Japan Radio]
Part No. NJG1105F
OCR Text .... @f=1860MHz -3dBm typ. @f=1860.0+1860.1MHz 20dB typ. @f=1960MHz 1.3dB typ. @f=1960MHz -2dBm typ. @f=1960.0+1960.1MHz 16dB typ. @f=2140MHz 1...8GHz Band) (VDD=2.9V, f=1860MHz, Ta=+25C, Zs=Zl=50) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Op...
Description 1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC

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    NJG1107KB2 NJG1107KB2-C1 NJG1107KB2-C2 NJG1107KB2-C3 NJG1107KB2-L1 NJG1107KB2-L2 NJG1107KB2-L3 NJG1107KB2-L4 NJG1107KB2-

NJRC[New Japan Radio]
Part No. NJG1107KB2 NJG1107KB2-C1 NJG1107KB2-C2 NJG1107KB2-C3 NJG1107KB2-L1 NJG1107KB2-L2 NJG1107KB2-L3 NJG1107KB2-L4 NJG1107KB2-R1
OCR Text ...=+25C, Zs=Zl=50) RATINGS UNIT 6.0 +15 450 -40~+85 -55~+125 V dBm mW C C nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band) (VDD=2.7V, f=1.49GHz,...8GHz Band) (VDD=2.7V, f=1.76GHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT1) PARAMETER SYMBOL CONDITIONS MIN T...
Description 1.5/1.9GHz LNA GaAs MMIC

File Size 424.56K  /  19 Page

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    ADF4360-1BCP ADF4360-2 ADF4360-2BCP ADF4360-3BCP ADF4360-4BCP ADF4360-5BCP ADF4360-6BCP ADF4360-7BCP

AD[Analog Devices]
Part No. ADF4360-1BCP ADF4360-2 ADF4360-2BCP ADF4360-3BCP ADF4360-4BCP ADF4360-5BCP ADF4360-6BCP ADF4360-7BCP
OCR Text ... 2150 MHz Divide-by-2 output +3.0 V to +3.6V Power Supply 1.8 V Logic Compatibility Integer-N Synthesizer Programmable Dual Modulus Prescale...8GHz to 2.15GHz. PFD frequency = 200kHz, Loop bandwidth = 10kHz. 7. Using 50Ohm resistors to VVco, I...
Description Integrated Synthesizer and VCO

File Size 308.39K  /  20 Page

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For 0.8ghz Found Datasheets File :: 978    Search Time::5.828ms    
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