...tion.
Features
* * * * *
1.5
2.3
0.5
0.85 0.7
5.5
7.0
0.8 1.6
1.2
0.6
7.5
0.5
1
2
3
1 : Bas...15 150 --55 to +150 Unit V V V V A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Co...
Description
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR 5-Pin 181;P Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR Low-Power, Single/Dual-Voltage 181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay PNP/NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon Transistors High Current Switching Applications PNP Epitaxial Planar Silicon Transistors High Current Switching Applications 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
...allowable power dissipation.
1.5
2.3
0.5
0.85 0.7
5.5
7.0
0.8 1.6
1.2
0.6
7.5
0.5
1
2
3
1 : Bas...15 150 -55 to +150 Unit V V V V A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Col...
...power dissipation.
0.85 0.7
1.5
2.3
0.5
5.5
7.0
0.8 1.6
1.2
0.6
7.5
0.5
1
2
3
1 : Base 2 : Collec...15 (--)15 (--)5 (--)10 (--)13 (--)1.2 1 15 150 --55 to +150 Unit V V V A A A W W C C
Electrical C...
...power dissipation.
0.85 0.7
1.5
2.3
0.5
5.5
7.0
0.8 1.6
1.2
0.6
7.5
0.5
1
2
3
1 : Base 2 : Collec...15 150 --55 to +150 Unit V V V A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Coll...
...nted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-of...15 IB = 10 mA
DC current gain
-2
100
-1
0 0
Common emitter Ta = 25C Single nonrepe...
... Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)160V, IE=0 VEB=(--)4...15 (280)140 1.5 (-0.3)0.2 (--)2.0 MHz pF V V V V V s s s 160 Unit mA mA
Any and all SANYO product...