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Philips
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Part No. |
PHE13005
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OCR Text |
... bias safe operating area. Vcl 1000V; Vcc = 150V; VBE = -5V; LB = 1H; Lc = 200H
500us DC
0.1
I
III
0.01
IC (A)
9
8
0...5 newton force on the centre of the envelope.
5
4
3
2
1
0
0
100
200
30... |
Description |
Silicon Diffused Power Transistor
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File Size |
51.74K /
7 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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Part No. |
2SC5264LS
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OCR Text |
...
* High breakdown voltage (VCBO=1000V). * High reliability (Adoption of HVP process). * Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5264]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
... |
Description |
NPN Triple Diffused Planar Silicon Transistor Inverter Lighting Applications
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File Size |
41.02K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
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OCR Text |
...
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operati... |
Description |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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File Size |
266.40K /
13 Page |
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Philips
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Part No. |
BUJ106A
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OCR Text |
...s safe operating area. Vclamp < 1000V; Vcc = 150V; -Vbe = 5V,3V & 1V; LB = 1H; LC = 200H
March 1999
5
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ106A
MECHANICAL DATA
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Description |
Silicon Diffused Power Transistor
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File Size |
43.76K /
7 Page |
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Maxim
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Part No. |
MAX5022EVKIT
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OCR Text |
...d)
DESIGNATION QTY DESCRIPTION 1000V, 1A, full wave diode bridge (SMDIP) Central Semiconductor CBR1D100S 600V, 1A ultrafast rectifier (SMA)...5% resistors (1206) 1.0k 1% resistor (0805) 24.9k 1% resistor (0805) 8.06k 1% resistor (0805) 10 5% ... |
Description |
Evaluation Kit for the MAX5022
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File Size |
132.87K /
5 Page |
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it Online |
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Price and Availability
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