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100v s Datasheet PDF File

For 100v s Found Datasheets File :: 16543 Search Time::1.281ms
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				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407s IRF1407sTRR
OCR Text	...rature, for 10 seconds Max. 100v 70V 520 3.8 200 1.3 20 390 see Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) Units ...s A nA nC ns nH --- --- --- --- --- --- --- pF Conditions VGs = 0V, ID = 250A Referen...
Description	75V single N-Channel HEXFET Power MOsFET in a TO-262 package Power MOsFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOsFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOsFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANsIsTOR \| MOsFET \| N-CHANNEL \| 75V V(BR)Dss \| 100A I(D) \| TO-263AB 晶体管\| MOsFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier Seme LAB
Part No.	IRF140sMD
OCR Text	...s ID(cont) RDs(on) FEATUREs 100v 13.9A W 0.077W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6...s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs Qgd td(on) tr td(...
Description	N-CHANNEL POWER MOsFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150sMD
OCR Text	...s ID(cont) RDs(on) FEATUREs 100v 19A W 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1...s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs Qgd td(on) tr td(...
Description	N-CHANNEL POWER MOsFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240sMD
OCR Text	... nC nC VDs = 0.5BVDss VDD = 100v ID = 13.9A RG = 9.1W ns sOURCE - DRAIN DIODE CHARACTERIsTICs Continuous source Current Pulse source Current 2 A V ns Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forwa...
Description	N.CHANNEL POWER MOsFET N-Channel Power MOsFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOs场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOsFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDs（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250sMD
OCR Text	... nC nC VDs = 0.5BVDss VDD = 100v ID = 22A RG = 2.35W ns sOURCE - DRAIN DIODE CHARACTERIsTICs Continuous source Current Pulse source Current 2 A V ns Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forwar...
Description	N.CHANNEL POWER MOsFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710s
OCR Text	... Avalanche Rated D VDss = 100v RDs(on) = 0.025 G Description Fifth Generation HEXFETs from International Rectifier utilize adva...s D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM ...
Description	Power MOsFET(Vdss=100v, Rds(on)=0.025ohm, Id=57A) 功率MOsFET（减振钢板基本\u003d 100v的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOsFET(Vdss=100v/ Rds(on)=0.025ohm/ Id=57A) Power MOsFET(Vdss=100v Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	... Avalanche Rated D VDss = 100v RDs(on) = 23m G s ID = 57A Description Advanced HEXFET(R) Power MOsFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
Description	Power MOsFET(Vdss=100v, Rds(on)=23mohm, Id=57A) 功率MOsFET（减振钢板基本\u003d 100v的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOsFET(Vdss=100v Rds(on)=23mohm Id=57A) 100v single N-Channel HEXFET Power MOsFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	... Current : 10 A (Max.) @ VDs = 100v Lower RDs(ON) : 0.092 (Typ.) IRF530A BVDss = 100 V RDs(on) = 0.11 ID = 14 A TO-220 1 2 3 ...s 4 O Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O...
Description	N-CHANNEL POWER MOsFET Advanced Power MOsFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530Ns IRF530NL
OCR Text	...y Avalanche Rated D VDss =100v G s RDs(on) = 0.11 ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...
Description	Power MOsFET(Vdss=100v/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOsFET Power MOsFET(Vdss=100v, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840As IRF840AsTRR
OCR Text	... VDs = 400V VDs = 250V VDs = 100v C, Capacitance(pF) 1000 Ciss 12 100 Coss 8 10 Crss 4 1 1 10 100 1000 ...s Duty Factor 0.1 % Fig 10a. switching Time Test Circuit 2.0 VDs 90% 0.0 25 50 75 100 125 1...
Description	TRANsIsTOR \| MOsFET \| N-CHANNEL \| 500V V(BR)Dss \| 8A I(D) \| TO-263AB 晶体管\| MOsFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOsFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOsFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOsFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

For 100v s Found Datasheets File :: 16543 Search Time::1.281ms
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