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  131 072 Datasheet PDF File

For 131 072 Found Datasheets File :: 1898    Search Time::1.672ms    
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    PA28F200BX-B120 PA28F200BX-B60 PA28F200BX-B80 PA28F200BX-T120 PA28F200BX-T60 PA28F200BX-T80 TB28F200BX TB28F200BX-B80 TB

INTEL[Intel Corporation]
Part No. PA28F200BX-B120 PA28F200BX-B60 PA28F200BX-B80 PA28F200BX-T120 PA28F200BX-T60 PA28F200BX-T80 TB28F200BX TB28F200BX-B80 TB28F200BX-T80 TE28F200BX-B80 TE28F200BX-T80 TE28F002BX-B80 TE28F002BX-T80 E28F200BX-T60 28F200BX 28F200BX-TB E28F002BX-B120 E28F002BX-B60 E28F002BX-B80 E28F002BX-T120 E28F002BX-T60 E28F002BX-T80 E28F200BX-B120 E28F200BX-B60 E28F200BX-B80 E28F200BX-T120 E28F200BX-T80
OCR Text ...ized as either 262 144 bytes or 131 072 words of information They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the industrystandard ROM EPROM pinout The Intel 28F002BX-T B are 8-bit wide flash m...
Description 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

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    TC551001 TC551001BFL-70L TC551001BFL-85L TC551001BFTL-70L TC551001BFTL-85L TC551001BPL TC551001BPL-70L TC551001BPL-85L T

TOSHIBA[Toshiba Semiconductor]
Part No. TC551001 TC551001BFL-70L TC551001BFL-85L TC551001BFTL-70L TC551001BFTL-85L TC551001BPL TC551001BPL-70L TC551001BPL-85L TC551001BTRL-70L TC551001BTRL-85L
OCR Text 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques...
Description SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

File Size 581.79K  /  13 Page

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    K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
OCR Text ... devices. They are organized as 131,072 words by 36 bits for K7P403622B and 262,144 words by 18 bits for K7P401822B, fabricated using Samsung's advanced CMOS technology. Single differential PECL level K clocks or Single ended or differentia...
Description SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

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    LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V1000BTS

SANYO[Sanyo Semicon Device]
Part No. LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V1000BTS
OCR Text 131,072 words x8 bits) SRAM Preliminary Overview The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device...
Description Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
Static RAMs (1Mb)
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

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    LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W1000BM LC35W1000BM-10U LC35W1000BM-70U

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W1000BM LC35W1000BM-10U LC35W1000BM-70U
OCR Text 131,072 words x 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for d...
Description Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM

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    LD2985AM50R LD2985AM40R LD2985BXX50 LD2985BXX47 LD2985BXX40 LD2985BXX38 LD2985BXX36 LD2985BXX35 LD2985BXX33 LD2985BXX32

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
??????浣?
Part No. LD2985AM50R LD2985AM40R LD2985BXX50 LD2985BXX47 LD2985BXX40 LD2985BXX38 LD2985BXX36 LD2985BXX35 LD2985BXX33 LD2985BXX32 LD2985BXX31 LD2985BXX30 LD2985BXX28 LD2985BXX25 LD2985BXX18 LD2985BM33R LD2985BM50R LD2985 LD2985AM15R LD2985AM18R LD2985AM25R LD2985AM285R LD2985AM28R LD2985AM30R LD2985AM31R LD2985AM32R LD2985AM33R LD2985AM35R LD2985AM36R LD2985AM38R LD2985AM47R LD2985BM15R LD2985BM18R LD2985BM25R LD2985BM285R LD2985BM28R LD2985BM30R LD2985BM31R LD2985BM32R LD2985BM35R LD2985BM36R LD2985BM38R LD2985BM40R LD2985BM47R LD2985AXX40 LD2985AXX50 LD2985AXX30 LD2985BXX27 LD2985BXX285 LD2985BXX15 -LD2985AXX47 -LD2985BXX47 AM36R
OCR Text ...2.921 2.950 3.030 3.075 3.105 3.131 3.1775 3.2085 3.232 3.280 3.312 3.333 3.3825 3.4155 3.535 3.587 3.622 3.636 3.690 3.726 3.838 3.895 3.93...072 3.2505 3.201 3.168 3.447 3.395 3.360 3.546 3.492 3.456 3.743 3.686 3.648 3.94 3.88 3.84 4 3.8 3....
Description VERY LOW DROP AND LOW NOISE VOLTAGE REGULATO WITH INHIBIT FUNCTION
VERY LOW DROP AND LOW NOISE VOLTAGE REGULATOR LOW ESR CAP. COMPATIBLE, WITH INHIBIT FUNCTION

File Size 299.88K  /  13 Page

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    AM27X128 AM27X128-120JC AM27X128-120JI AM27X128-120PC AM27X128-120PI AM27X128-150JC AM27X128-150JI AM27X128-150PC AM27X1

SPANSION LLC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
Part No. AM27X128 AM27X128-120JC AM27X128-120JI AM27X128-120PC AM27X128-120PI AM27X128-150JC AM27X128-150JI AM27X128-150PC AM27X128-150PI AM27X128-200JC AM27X128-200JI AM27X128-200PC AM27X128-200PI AM27X128-255JC AM27X128-255JI AM27X128-255PC AM27X128-255PI AM27X128-55JC AM27X128-55JI AM27X128-55PC AM27X128-55PI AM27X128-70JC AM27X128-70JI AM27X128-70PC AM27X128-70PI AM27X128-90JC AM27X128-90JI AM27X128-90PC AM27X128-90PI
OCR Text ...DQ7 Y Gating X Decoder 131,072 Bit Cell Matrix 12083F-1 Publication# 12083 Rev: F Amendment/0 Issue Date: May 1998 PRODUCT SELECTOR GUIDE Family Part Number Speed Options VCC = 5.0 V 5% VCC = 5.0 V 10% -55 55 55 35 -70 70 7...
Description CMOS Quad 2-Input NAND Schmitt Triggers 14-CDIP -55 to 125 16K X 8 OTPROM, 90 ns, PDIP28
CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 128千比特(16亩8位)的CMOS ExpressROM装置
CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 16K X 8 OTPROM, 150 ns, PDIP28
CAPACITOR .0033UF UV BOX TYPE 16K X 8 OTPROM, 150 ns, PQCC32
CMOS Quad 2-Input NAND Schmitt Triggers 14-TSSOP -55 to 125
128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device

File Size 72.39K  /  10 Page

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    CLY32-00 CLY32-05 CLY32-10 CLY32

INFINEON[Infineon Technologies AG]
Part No. CLY32-00 CLY32-05 CLY32-10 CLY32
OCR Text ...675 135 1,49 11,2 7,0 4,6 0,829 131 0,910 8 0,0718 5 0,676 134 1,50 11,0 6,8 4,7 0,831 130 0,890 6 0,0722 5 0,677 133 1,52 10,9 6,7 4,8 0,83...072 67 0,0412 20 0,488 173 1,05 18,7 17,4 2,898 64 0,0418 19 0,493 172 1,09 18,4 16,6 2,740 61 0,042...
Description Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET

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    CXK591000YM-55LL CXK591000TM CXK591000TM-10LL CXK591000TM-55LL CXK591000TM-70LL CXK591000M CXK591000M-10LL CXK591000M-55

SONY[Sony Corporation]
Sony, Corp.
Part No. CXK591000YM-55LL CXK591000TM CXK591000TM-10LL CXK591000TM-55LL CXK591000TM-70LL CXK591000M CXK591000M-10LL CXK591000M-55LL CXK591000M-70LL CXK591000YM-10LL CXK591000YM CXK591000YM-70LL
OCR Text 131,072-word x 9-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon ...
Description 131/072-word X 9-bit High Speed CMOS Static RAM
131,072-word X 9-bit High Speed CMOS Static RAM 131,072字9位高速CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131,072字9位高速CMOS静态RAM

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    CY62128V CY62128V18 CY62128V18L-200SC CY62128V18L-200SI CY62128V18L-200ZAC CY62128V18L-200ZAI CY62128V18L-200ZC CY62128V

CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY62128V CY62128V18 CY62128V18L-200SC CY62128V18L-200SI CY62128V18L-200ZAC CY62128V18L-200ZAI CY62128V18L-200ZC CY62128V18L-200ZI CY62128V18L-200ZRC CY62128V18L-200ZRI CY62128V18LL-200SC CY62128V18LL-200SI CY62128V18LL-200ZAC CY62128V18LL-200ZAI CY62128V18LL-200ZC CY62128V18LL-200ZI CY62128V18LL-200ZRC CY62128V18LL-200ZRI CY62128V25 CY62128V25L-100SC CY62128V25L-100SI CY62128V25L-100ZAC CY62128V25L-100ZAI CY62128V25L-100ZC CY62128V25L-100ZI CY62128V25L-100ZRC CY62128V25L-100ZRI CY62128V25LL-100SC CY62128V25LL-100SI CY62128V25LL-100ZAC CY62128V25LL-100ZAI CY62128V25LL-100ZC CY62128V25LL-100ZI CY62128V25LL-100ZRC CY62128V25LL-100ZRI CY62128VL-70SC CY62128VL-70SI CY62128VL-70ZAC CY62128VL-70ZAI CY62128VL-70ZC CY62128VL-70ZI CY62128VL-70ZRC CY62128VL-70ZRI CY62128VLL-55ZAI CY62128VLL-70SC CY62128VLL-70SI CY62128VLL-70ZAC CY62128VLL-70ZAI CY62128VLL-70ZC CY62128VLL-70ZI CY62128VLL-70ZRC CY62128VLL-70ZRI CY62128VXL-70ZC CY62128VL-70SCT CY62128VLL-70SCT CY62128VLL-70ZCT
OCR Text ...e CMOS static RAMs organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE 2), an active Logic Block Diagram Pin Configurations Top View SOIC NC A16 ...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 100 ns, PDSO32
SWITCH DETECT PB SPST RT ANG .1A

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