| |
|
 |
ISSI
|
| Part No. |
24C01 24C02
|
| OCR Text |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
FEATURES
* Low Power CMOS Technology -Standby Current less than 8 A (5.5V) -...WORD ADDRESS COUNTER
EEPROM ARRAY
Y DECODER
GND
4
ACK
Clock DI/O
>
nMOS
D... |
| Description |
(24C01 - 24C16) 2-WIRE SERIAL CMOS EEPROM
|
| File Size |
100.84K /
16 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
|
| OCR Text |
... HY51V18163HG HY51V18163HGL Ref 1K 1K Normal 16ms 128ms L-part
7.2mW(CMOS level Max) 0.83mW (L-version : Max)
ORDERING INFORMATION
Pa...Word Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word Word Word Word... |
| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
| File Size |
105.82K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
Tenx Technology
|
| Part No. |
TM58P10
|
| OCR Text |
...11
TM58P10
1. Feature
ROM: 1K x 14 bits RAM: 33 x 8 bits STACK: 4 Levels I/O ports: 12 I/O PAD Timer/counter: 8bits x1 (TMR0) Prescaler...Word
RTCC
i
OSC1 OSC2
RESETB/VPP
4
tenx technology, inc.
Rev1.2 2004/1/9
TM58P... |
| Description |
8 Bit Microcontroller
|
| File Size |
170.80K /
26 Page |
View
it Online |
Download Datasheet |
| |
|
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| Part No. |
ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB3013TR ST93C46AB3TR ST93C46AB6013TR ST93C46AB6TR ST93C46AM1013TR ST93C46AM1TR ST93C46AM3013TR ST93C46AM3TR ST93C46AM6013TR ST93C46AM6TR ST93C46C ST93C46CB1013TR ST93C46CB1TR ST93C46CB3013TR ST93C46CB3TR ST93C46CB6013TR ST93C46CB6TR ST93C46CM1013TR ST93C46CM1TR ST93C46CM3013TR ST93C46CM3TR ST93C46CM6013TR ST93C46CM6TR ST93C46T ST93C46TB1013TR ST93C46TB1TR ST93C46TB3013TR ST93C46TB3TR ST93C46TB6013TR ST93C46TB6TR ST93C46TM1013TR ST93C46TM1TR ST93C46TM3013TR ST93C46TM3TR ST93C46TM6013TR ST93C46TM6TR ST93C47AB1013TR ST93C47AB1TR ST93C47AB3013TR ST93C47AB3TR ST93C47AB6013TR ST93C47AB6TR ST93C47AM1013TR ST93C47AM1TR ST93C47AM3013TR ST93C47AM3TR ST93C47AM6013TR ST93C47AM6TR ST93C47C ST93C47CB1013TR ST93C47CB1TR ST93C47CB3013TR ST93C47CB3TR ST93C47CB6013TR ST93C47CB6TR ST93C47CM1013TR ST93C47CM1TR ST93C47CM3013TR ST93C47CM3TR ST93C47CM6013TR ST93C47CM6TR ST93C47T ST93C47TB1013TR ST93C47TB1TR ST93C47TB3013TR ST93C47TB3TR ST93C47TB6013TR ST93C47TB6TR ST93C47TM1013TR ST93C47TM1TR ST93C47TM3013TR ST93C47TM3TR ST93C47TM6013TR ST93C47TM6TR ST93C46CM1 2442 ST93C46 -ST93C47AB3013TR -ST93C46CM1 -ST93C46CM1013TR
|
| OCR Text |
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMM... |
| Description |
From old datasheet system
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No
MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
|
| File Size |
109.99K /
13 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| Part No. |
IDT72V7260L10BBG 72V7260L15BB
|
| OCR Text |
...supersync ii tm fifo 512 x 72, 1k x 72, 2k x 72, 4k x 72, 8k x 36, 16k x 72, 32k x 72, 64k x 72 pin configuration pbga (bb256-1, order cod...word data latency period, from the time the first word is written to an empty fifo to the time it ca... |
| Description |
4K X 72 OTHER FIFO, 6.5 ns, PBGA256
4K X 72 OTHER FIFO, 10 ns, PBGA256
|
| File Size |
446.31K /
42 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
