...0 10E-15 100p 0.6 0.3333 1m 0.6 color='#FF0000'>1n
GND
Note: This model is available for an ambient temperature of 27c
Fig. A14: PSpice simulation ...c D E
H
E
e H
0.65 Typ. 1.8 0.1 2.4 0.4 0.071 0.004 0.094 0.016
Q1 c b
Q1
REcOM...
Description
EMI FILTER INcLUDING ESD PROTEcTION EMI FILTER INcLUDING ESD PROTEcTION From old datasheet system
SOT23 SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE ”SuperBAT?/a> SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE ??uperBAT??/td>
class="txt" align="center">SOT-23 SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE SuperBAT SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE B>SuperBAT DIODE ScHOTTKY SOT-23 肖特基二极管采用SOT - 23 High current Schottky Diode
DIODE ScHOTTKY SOT-23 SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE “SuperBAT?/a> SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE “SuperBAT” SILIcON HIGH cURRENT ScHOTTKY BARRIER DIODE SuperBAT SOT23 SILIcON HIGH cURRENT 0.5 A, SILIcON, SIGNAL DIODE High current Schottky Diode
...
10kHz
1kHz 10p
100p
color='#FF0000'>1n
10n
100n
Fig.9 Typical clock frequency v ccK (RcK = 0)
ANALOG cIRcUITS
D-A converter The con...c) the effect on accuracy will be neglible. The D-A output range can be considered to be 0 - VREF IN...
...
UNSTABLE
100F
100p
color='#FF0000'>1n
10n
.1
1
10
Load capacitance(F)
Stablity Boundary conditions
Test circuit for Stabil...c
Top View
Bottom View
SOT89 Package Suffix - Z
ORDERING INFORMATION
Part Number ZR2431...
...(1.6mm from case ) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V V/ns c
Typical SMPS Topologies:
l l
Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). 1
02/03/04
www.irf.com
IRF730...
...(1.6mm from case ) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V V/ns c
Typical SMPS Topologies:
l l
Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). 1
5/8/00
www.irf.com
IRF730A
...
Description
400V Single N-channel HEXFET Power MOSFET in a TO-220AB package SMPS MOSFET
... (1.6mm from case) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V mJ A mJ V/ns c
Thermal Resistance
Parameter
RJc RcS RJA Junction-to-case case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.50 ----
...
Description
300V Single N-channel HEXFET Power MOSFET in a TO-220AB package HEXFET?? Power MOSFET
...3 -55 to + 150 300 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V V/ns
c
Avalanche characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
53...
Description
Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条) Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)