...OUT
GND
MAX2611
GND
2
1 IN
GND
IN
IN CBLOCK
SOT143
MAX2611
________________________________________________...4 (derate 4mW/C above +70C)..................320mW Operating Temperature Range ........................
...=8GHz
0.50.15
3
@f=8GHz
2
2
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.50.2
QUALITY GRADE
* IG...4.5 - - - 125 Unit V V A mA V mS dB dBm C/W
*1:Channel to ambient
Nov. 97
MITSUBISHI SEMICO...
Description
TAPE CARRIER MICROWAVE POWER GaAs FET From old datasheet system
...
3
3 CATHODE
1 ANODE
1 2
CASE 318-08, STYLE 6 SOT- 23 (TO-236AB)
MAXIMUM RATINGS
MBD101 MMBD101LT1 Rating symbol value unit ...4 0.5 0.6 0.7
T A , AMBIENT TEMPERATURE (C)
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Reverse...
2.5GHz, +20dBm Power Amplifier IC in UCSP Package MAX2240
Features
o 2.4GHz to 2.5GHz Frequency Range o High +20dBm Output Power o 2-Bit Digital Power Control: 4 Output Levels o Integrated Input Match to 50 o Low 105mA Operating Current o...
Description
Amplifier. Other 2.5GHz, 20dBm Power Amplifier IC in UCSP Package 2.5GHz20dBm功率放大器IC,UCSP封装
2.0 GHz
FEBRUARY 2001
Features
LOW INSERTION LOSS: 0.4dB INTEGRATED 2:4 DECODER 14 LEAD SOIC PACKAGE
General Description
The HMC165S14 is a low-cost SP4T switch in a 14-lead SOIC package for use in antenna diversity, switched filte...
... @f=8GHz
0.50.15
@f=8GHz
2
2
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.50.2
3
QUALITY GRADE
*...4.5 - - - 125 Unit V V A mA V mS dB dBm C/W
Gate to drain breakdown voltage IG=-200A Gate to sour...
Description
From old datasheet system MICROWAVE POWER GaAs FET
...ND LO OUT GND GND GND GND GND 1 2 3 4 5 6 7 8 9 20 MIXER OUT 19 MIXER OUT 18 GND 17 MIXER IN 16 GND 15 LNA IN 14 GND 13 LNA OUT 12 VCC 11 GND
FEATURES
* Low current consumption * Outstanding gain and noise figure * Excellent gain stab...
Description
1 GHz low voltage LNA and mixer From old datasheet system 1GHz low voltage LNA and mixer