2SJ479(L), 2SJ479(S)
Silicon P channel DV-L MOS FET High Speed Power Switching
ADE-208-541 1st. Edition Features
* Low on-resistance R ...5 -2 -1 -0.5
0 s
m
=
1
10 m s
s
sh
50
25
Operation in this area is limited b...
Description
Power switching MOSFET Silicon P channel DV-L MOS FET High Speed Power Switching Silicon P channel DVL MOS FET High Speed Power Switching
...(VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode
...5 C/W C/W
The information in this document is subject to change without notice.
Document No. D...
Description
From old datasheet system SWITchING P-chANNEL POWER MOS FET INDUSTRIAL USE
...S (in millimeter)
10.00.3 4.50.2 3.20.2 2.70.2
15.00.3
30.1 40.2
FEATURES
* Super Low On-State Resistance RDS(on)1 = 50 m: Max. (...5 MIN.
12.00.2
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Vol...
Description
From old datasheet system SWITchING P-chANNEL POWER MOS FET INDUSTRIAL USE
2SJ496
Silicon P-channel MOS FET High Speed Power Switching
ADE-208-482 1st. Edition Features
* Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A
Out...
Description
Silicon P-channel MOS FET High Speed Power Switching
2SJ504
Silicon P channel MOS FET High Speed Power Switching
ADE-208-546 Target specification 1st. Edition Features
* Low on-resistance ...5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V ...
Description
Silicon P channel MOS FET High Speed Power Switching
2SJ505(L), 2SJ505(S)
Silicon P channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
* Low ...5 V Pulse Test -5 V -8 V -80 -4 V -60 -3.5 V -40 -3 V -20 VGS = -2.5 V 0 -4 -8 -12 Drain to Source V...
Description
Silicon P channel MOS FET High Speed Power Switching Silicon P channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
2SJ506(L), 2SJ506(S)
Silicon P channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
* Low ...5 -2 -1 -0.5 -0.2 -0.1
10
s
channel Dissipation
Drain Current
20
DC
=1
Op
1...
Description
Silicon P channel MOS FET High Speed Power Switching Silicon P channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET