| |
|
 |
GHZTECH[GHz Technology]
|
| Part No. |
23A003
|
| OCR Text |
...3.5 Volts 0.3 Amps
- 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 2.3 GHz Ic = 1... |
| Description |
0.3 W, 15 V, 2300 MHz common emitter transistor
0.3 Watts, 15 Volts, Class A Linear to 2300 MHz
|
| File Size |
25.50K /
1 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
1N4151-1
|
| OCR Text |
...e: Breakdown Voltage: -55oC to +200oc -65oC to +200oc 25oC/W max. (See Note 3) 250oC/W max. 500mW 50V 75V nom.
3.05 min 5.08 max
0.458 min 0.558 max
Dimensions in Millimetres ELECTRICAL CHARACTERISTICS at 25oC unless otherwise specif... |
| Description |
Switching Diode
|
| File Size |
25.88K /
1 Page |
View
it Online |
Download Datasheet |
| |
|
|
GHZTECH[GHz Technology]
Fairchild Semiconductor, Corp.
|
| Part No. |
1618-35
|
| OCR Text |
...lts 3.5 Volts 12 A
- 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1600-1800 MHz Vcb = 28... |
| Description |
35 W, 28 V, 1600-1800 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1600 - 1800 MHz
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一c）|7DVAR
|
| File Size |
288.33K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
1214-370M
|
| OCR Text |
... 3.0 Volts 25 Amps
- 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 O C
SYMBOL Pout Pg CHARACTERISTICS Power Out (Note 2) Pulsed Power Gain Collector Efficiency Pulse Amplitude Droop Load Mismatch Tolerance TEST CONDITIONS F =... |
| Description |
370 Watts - 50 Volts, 330 ms, 10% Radar 1200 - 1400 MHz
|
| File Size |
117.13K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
GHZTECH[GHz Technology]
|
| Part No. |
1214-30
|
| OCR Text |
...3.5 Volts 4.0 Amps
- 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1200-1400 MHz Vcc = 28... |
| Description |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
| File Size |
338.39K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| Part No. |
1214-300M
|
| OCR Text |
... 3.5 Volts 20 Amps
- 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 O C
SYMBOL Pout Pg
CHARACTERISTICS
TEST CONDITIONS Freq = 1200 - 1400 MHz Vcc = 40 Volts Pin = 40 Watts Pulse Width = 150s Duty Factor = 10%
MIN
TYP... |
| Description |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
| File Size |
117.23K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
1214-220M
|
| OCR Text |
...Volts 5 mA 20 Amps
- 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 O C
SYMBOL Pout Pg
CHARACTERISTICS
TEST CONDITIONS
Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz Vcc=40V, Pin=40W, f = ... |
| Description |
220 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
| File Size |
73.46K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| Part No. |
0910-60M
|
| OCR Text |
...olts 3.5 Volts 8 Amps - 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pg c Pd Rl VSWR1 VSWRs
CHARACTERISTICS
TEST CONDITIONS Freq = 890 - 1000 MHz Vcc = 40 Volts Pin = 9.5 Watts Pulse Width = 150s Duty Factor ... |
| Description |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
| File Size |
96.96K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
0405-1000M
|
| OCR Text |
...lts 3.5 Volts 70 Amps - 65 to + 200oc + 200oc
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pg CHARACTERISTICS Power Out (Note 2) Pulsed Power Gain Collector Efficiency Pulse Amplitude Droop Load Mismatch Tolerance TEST CONDITIONS F = ... |
| Description |
1000 Watts - 40 Volts, 300us, 10% UHF Pulsed Radar 400 - 450 MHz
|
| File Size |
139.99K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
