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  45ns vsop ind tempflash Datasheet PDF File

For 45ns vsop ind tempflash Found Datasheets File :: 50+       Page :: | 1 | 2 | 3 | 4 | <5> |   

    K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC K4E641612B-TC K4E641612B K4E641612B-TL60 K4E661612B-TL60 K4E641612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC K4E641612B-TC K4E641612B K4E641612B-TL60 K4E661612B-TL60 K4E641612B-TL45 K4E661612B-TL45 K4E641612B-TL50 K4E661612B-TL50
Description 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
File Size 883.49K  /  36 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V4004BSL-5 KM416V4104BSL-45 KM416V4104BSL-5 KM416V4104BSL-6
Description 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
File Size 805.25K  /  36 Page

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    K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
File Size 842.61K  /  35 Page

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    K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-T

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
File Size 842.92K  /  35 Page

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    Hitachi,Ltd.
Sanyo Denki Co., Ltd.
ZF Electronics, Corp.
Part No. AI3D5 AI3D9 AI3D7 AI3D8 AI3D6 AM2D8 AM2D55J FAM2D5 FAM2D12G FAM2D15J AI3D13G AI4D7 AI4D8 AI4D5 AI4D6 AI4D9 AM2D10 AM2D14G FAM2D75J FAI3D75J FAI4D75J AM3D75J AI4D9J AI3D9J AM2D9J AM3D9J FAM2D4 FAM2D6 FAM3D45J FAM3D55 FAM3D50J FAM3D45G AI4D60 FAM2D9 FAM3D8 FAM2D13 FAM2D14 FAM2D16 FAM3D6G FAM3D6J FAM2D9J AI4D6J AI4D16J FAI4D16J FAI4D6J FAM3D35J AM2D50G AM2D50J AM2D5G AM2D55G AM3D55G AI3D5G FAM3D55J AI3D55G FAM2D35J AI4D5G AI4D55G FAM3D15J FAM3D5J FAM2D9G FAM2D8G FAM2D8J FAM2D80G FAM2D80J AI3D40 AI3D40G AI4D45G AI3D45G AI4D40G AI3D40J AI3D45J AI4D40J FAI4D6G FAM2D60J FAI3D60G AM3D10J AI4D25J AI3D20G AM3D11J FAM3D35G
Description 8 MINI MAP,PB/HALO FREE,NIPDAU LF,1.8V(SERIAL EE)
8 ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 1; Comments: High-rugged type; V_CES (V): (max 1200)
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: standard; Internal
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: low VF; Internal
10MS, 8 EIAJ, ind TEMP, GREEN, 1.8V(SERIAL EE)
Stepping Motor Driver ICs; Function: Driver; Vopmax (Vm*): 34V (40V); Io (lpeak): 1.5A (1.8A); Excitation: 1/16 step; I/F: CLK input; Mixed Decay Mode: included; Package: HSOP36; RoHS Compatible: yes
250NS,32LCC,883C; LEV B FULLY COMPLIANT(EEPROM)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; No Of Circuits: New product; Comments: 2.9; V_CES (V): (max 400)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min -0.6) (max -1.1); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 0.5) (max 1.2); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 1.1) (max 1.8); R DS
Dual/Quad Zero-Drift Operational Amplifiers; Package: SSOP; No of Pins: 16; Temperature Range: -40° to 125°C
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE)
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High current; Part
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: high breakdown
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: low VF; Internal
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High voltage SW; Part
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On (Ω): 5.2 (max 15); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 100)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, ind TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, ind TEMP, GREEN, 2.7V(SERIAL EE)
DIE/WAFER FORM(EEPROM)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.5) (max 1.1); R DS On (Ω): 0.140 (max 0.180) 0.120 (max 0.145); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 500)
High-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: VESM; Number Of Pins: 3; Application Scope: VHF, UHF MIX; V F (V): 0.25; C T (pF): 0.6; V R (V): (max 4); Average Forward Current I_F Max (mA): (max 25)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min -0.6) (max -1.1); R DS On (Ω): 18 (max 45); Drain-Source Voltage (V): (max -20); Drain Current (mA): (max -100)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 0.8) (max 2); R DS On (Ω): 0.33 (max 0.44) 0.23 (max 0.3); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 2000)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 20 (max 40); Drain-Source Voltage (V): (max -20); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On (Ω): 0.6 (max 1); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 200)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 2.4 (max 4); Drain-Source Voltage (V): (max -30); Drain Current (mA): (max -200)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -2) (max -3.5); R DS On (Ω): 1.3 (max 2); Drain-Source Voltage (V): (max -60); Drain Current (mA): (max -200)
10MS, 8 PDIP, ind TEMP, GREEN, 1.8V(SERIAL EE)
Logic IC 逻辑IC
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 2; Comments: Non isolation package; V_CES (V): (max 900) 逻辑IC
90NS, vsop, ind TEMP(EPROM) 逻辑IC
Dual -48V Supply and Fuse Monitor; Package: SO; No of Pins: 8; Temperature Range: 0&deg;C to 70&deg;C 逻辑IC
45ns, SOIC, ind TEMP(EPROM) 逻辑IC
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min 0.8) (max 1.5); R DS On (&#206;&#169;): 4 (max 7); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 100) 逻辑IC
File Size 81.95K  /  1 Page

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    EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL32M EDI88130CSNM EDI88130CSL32B EDI88130LPSL32I EDI88130CSCC EDI88130CS

White Electronic Designs
ETC
Electronic Theatre Controls, Inc.
Part No. EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL32M EDI88130CSNM EDI88130CSL32B EDI88130LPSL32I EDI88130CSCC EDI88130CSLB EDI88130CSL32C EDI88130CSL32I EDI88130LPSL32B EDI88130LPSL32C EDI88130LPSL32M EDI88130CSCM EDI88130CSFI EDI88130CSLC EDI88130CSTB EDI88130CSFB EDI88130CSNB EDI88130CSTC EDI88130CSCI EDI88130CSCB EDI88130CSFC EDI88130CSLI EDI88130CSNC EDI88130CSNI EDI88130CSFM EDI88130LPSCM EDI88130CSTI EDI88130LPSNB EDI88130LPSNC EDI88130LPSLM EDI88130CS17FI EDI88130LPS17FI EDI88130LPSTB EDI88130LPS17LB EDI88130CS17CI EDI88130LPS17CI EDI88130CS45TM EDI88130LPS45TM EDI88130CS25TM EDI88130CS15TM EDI88130LPS17FB EDI88130LPS17L32I EDI88130CS17L32M EDI88130LPS17L32C EDI88130CS17L32B EDI88130LPS20NB EDI88130CS17CC EDI88130LPS17CC EDI88130CS17NM EDI88130LPS17NM EDI88130CS45NB EDI88130CS35NB EDI88130LPS35NB EDI88130LPS55NB EDI88130LPS45NB EDI88130LPS17LI EDI88130CS45FB EDI88130LPS55FB EDI88130CS15FB EDI88130CS25FB EDI88130CS35FB EDI88130CS55FB EDI88130LPS15FB EDI88130LPS25FB EDI88130LPS35FB EDI88130LPS45FB
Description 25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM，贴962-89598
128Kx8 Monolithic SRAM/ SMD 5962-89598
15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
File Size 254.50K  /  9 Page

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    WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS128K32N-17H1M WS128K32-35 WS128K32-20 WS128K32-17 WS128K32-15 WS128K32

NXP Semiconductors N.V.
White Electronic Designs Corporation
Part No. WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS128K32N-17H1M WS128K32-35 WS128K32-20 WS128K32-17 WS128K32-15 WS128K32-25 WS128K32N-45H1C WS128K32N-45H1M WS128K32L-35G2TM WS128K32-55 WS128K32L-45H1QA WS128K32L-20H1QA WS128K32L-55H1QA WS128K32L-15H1QA WS128K32L-35H1QA WS128K32L-17H1C WS128K32L-17H1CA WS128K32L-17H1M WS128K32L-17H1IA WS128K32L-17H1I WS128K32L-17H1MA WS128K32L-17H1Q WS128K32N-17H1I WS128K32N-17H1IA WS128K32N-17H1MA WS128K32N-17H1Q WS128K32N-177H1CA WS128K32N-17H1CA
Description 35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
File Size 157.83K  /  9 Page

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    Samsung Electronic
Part No. KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
File Size 803.02K  /  35 Page

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    White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA-F32 EDI88512CA_LPA-F36 EDI88512CA_LPA-K EDI88512CA_LPA-N EDI88512CA_LPA-N36 EDI88512CA_LPA-T EDI88512CANB EDI88512LPAKM EDI88512LPAKC EDI88512LPANI EDI88512CATB EDI88512LPATB EDI88512LPAF36M EDI88512LPAF36I EDI88512LPAF36C EDI88512LPAF36B EDI88512LPAF32M EDI88512LPAF32I EDI88512LPAF32C EDI88512LPAF32B EDI88512CAB32M EDI88512CA/LPA-C EDI88512CA/LPA-K EDI88512CA/LPA-N EDI88512CA/LPA-N36 EDI88512CAB32I EDI88512LPAB32I EDI88512CA/LPA-F36 EDI88512LPAB32B EDI88512LPAB32C EDI88512LPAB32M EDI88512CAF32B EDI88512CA/LPA-T EDI88512CA/LPA-B32 EDI88512CAB32C EDI88512LPANB EDI88512LPANC EDI88512CAN36B EDI88512CAN36C EDI88512CANC EDI88512LPAN36C EDI88512LPAN36B EDI88512LPAN36M EDI88512CANM EDI88512CANI EDI88512CAN36I EDI88512LPAN36I EDI88512CAN36M EDI88512CA/LPA-F32 EDI88512CAKI EDI88512LPA55B32B EDI88512LPA55B32I EDI88512LPA55B32C EDI88512LPA55CB EDI88512LPA55B32M EDI88512LPA55CC EDI88512LPA55CI EDI88512LPA55F32B EDI88512LPA55CM EDI88512LPA55F32I EDI88512LPA55F32C EDI88512LPA55F36B EDI88512LPA55F32M EDI88512LPA55F36I EDI88512LPA55F36C EDI88512LPA55F36M EDI88512LPA55KC EDI88512LPA55KB EDI88512LPA55KI EDI88512LPA55N36I EDI88512LPA55N36C EDI88512LP
Description 20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40&deg;C to 85&deg;C; Package: 8-MSOP T&amp;R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40&deg;C to 85&deg;C; Package: 8-MSOP T&amp;R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40&deg;C to 85&deg;C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
File Size 265.80K  /  9 Page

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    CY14E104M-ZS20XI CY14E104K-ZS25XCT CY14E104M-ZS25XCT CY14E104K-ZS15XCT CY14E104K-ZS15XI CY14E104K-ZS15XIT CY14E104K-ZS20

Cypress Semiconductor, Corp.
Part No. CY14E104M-ZS20XI CY14E104K-ZS25XCT CY14E104M-ZS25XCT CY14E104K-ZS15XCT CY14E104K-ZS15XI CY14E104K-ZS15XIT CY14E104K-ZS20XCT CY14E104K-ZS20XI CY14E104K-ZS20XIT CY14E104K-ZS25XI CY14E104K-ZS25XIT CY14E104M-ZS20XCT CY14E104M-ZS15XI CY14E104M-ZS15XCT CY14E104K CY14E104K-ZS45XCT CY14E104K-ZS45XI CY14E104K-ZS45XIT CY14E104K-ZSP15XCT CY14E104K-ZSP15XI CY14E104K-ZSP15XIT CY14E104K-ZSP20XCT CY14E104K-ZSP20XI CY14E104K-ZSP20XIT CY14E104K-ZSP25XCT CY14E104K-ZSP25XI CY14E104K-ZSP25XIT CY14E104K-ZSP45XCT CY14E104K-ZSP45XI CY14E104K-ZSP45XIT CY14E104M-ZSP15XCT CY14E104M-ZS20XIT CY14E104M-ZSP15XIT CY14E104M-ZSP20XCT CY14E104M-ZSP25XI CY14E104M-ZS15XIT CY14E104M-ZS25XIT CY14E104M-ZS45XCT CY14E104M-ZS45XIT CY14E104M-ZSP25XCT CY14E104M-ZSP20XI CY14E104M-ZSP20XIT CY14E104M-ZSP25XIT
Description Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
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