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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMA420NZ0609 FDMA420NZ
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| OCR Text |
...
Drain
G D D
5
2
6
1
D
D
S
Bottom Drain Contact
MicroFET Bottom View 2X2
Absolute Maximum Ratings TA = 2...300s DUTY CYCLE = 2.0%MAX
VGS = 4.5V VGS = 3.5V VGS = 3.0V VGS = 2.0V VGS = 1.5V VGS = 2.5V
NORM... |
| Description |
Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз
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| File Size |
250.62K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMC2523P07 FDMC2523P
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| OCR Text |
...ching Low gate charge ( typical 6.2 nC ) Improved dv / dt capability RoHS Compliant
tm
General Description
These P-Channel MOSFET enh...300s, Duty cycle < 2.0%. 4: Essentially independent of operating temperature.
FDMC2523P Rev.C
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| Description |
P-Channel QFET -150V, -3A, 1.5Ω
P-Channel QFET -150V, -3A, 1.5ヘ
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| File Size |
160.20K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFB38N20DPBF IRFSL38N20D IRFS38N20D
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| OCR Text |
... for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
44 32 180 3.8 320 2.1 30 9.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*...300s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
0.1 0.1 1
300s PULSE WIDTH Tj = 175C
10 100
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| Description |
HEXFET Power MOSFET
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| File Size |
272.67K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGS15B60KDPBF IRGSL15B60KDPBF IRGB15B60KDPBF
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| OCR Text |
...-- 0.50 --- --- 1.44
Max.
0.6 2.1 --- 62 40 ---
Units
C/W
g
www.irf.com
10/03/05
1
IRGB/S/SL15B60KDPbF
Electrical ...300s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 300s
100 90 80 70
ICE (A)
60... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
818.85K /
15 Page |
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it Online |
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Diodes Inc.
Diodes, Inc.
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| Part No. |
BAS70DW-05-7-F BAS70DW-04-7-F BAS70DW-06-7-F BAS70TW-7-F BAS70BRW-7-F
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| OCR Text |
...ation (mw) d note 1 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 1 . 8 1.6 0 10 5 20 25 15 35 30 40 c , total capacitance (pf) t v , reverse voltage (v) fi g .3 t y pical capacitance r f = 1.0mhz 0.1 1 10 100 1000 10000 0 20 10 30 60 50 40 70 v , reverse ... |
| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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| File Size |
63.21K /
3 Page |
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DIODES[Diodes Incorporated]
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| Part No. |
BAS70JW-7-F BAS70JW_1 BAS70JW
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| OCR Text |
...0.1 0 0.2 0.4
TA = -40C
0.6
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (nA)
10000
TA = 125C
1000
TA = 75C
100
10
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| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
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| File Size |
63.96K /
3 Page |
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it Online |
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Price and Availability
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