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				NEC Corp.
Part No.	2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text	... V, IC = 3 mA, f = 2 GHz) 2 1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 PACKAGE DIMENSIONS in milimeters 1.6 0.1 0.8 ...350 s, Duty Cycle 2 % *2 The emitter terminal and the case shall be connected to the guard terminal...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
File Size	59.95K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...gh Gain Bandwidth Product (fT = 6.5 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in ...350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be groun...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...20 10 20 10 0 2 8 4 6 10 VCE - Collector to Emitter Voltage - V 12 1 10 IC - Collector Current - mA 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 fT - Gain Bandwidth Product - GHz INSERTION POWER GAIN vs...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	... IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA1 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz2 VCE = 6 V, IC = 10 mA,f = 2.0 GHz VC...350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be groun...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	... VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter C...350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be groun...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	... VCBO VCEO VEBO IC PT Ti Tstg 9 6 2 30 150 150 -65 to + 150 V V V mA mW C C Caution: Electrostatic Sensitive Device Document No. P1039...350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be groun...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
Part No.	2SC829 2SC829B 2SC829C
OCR Text	...Hz min 30 20 5 70 150 230 1.3 1.6 60 250 MHz pF typ max Unit V V V *h FE Rank classification B 70 ~ 160 C 110 ~ 250 hFE Rank ...350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 40...
Description	Silicon NPN epitaxial planer type(For high-frequency amplification) TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-92 Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
File Size	54.87K / 3 Page	View it Online	Download Datasheet

				Fuji Electric Panasonic Semiconductor
Part No.	2SD1119
OCR Text	...ortion. Ta=25C 2.0 IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 5 2SD1119 IC -- VCE 6 VCE=2V 25C Ta=75C 4 -25C IC -- VBE Collector ...350 300 250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100 Cob -- VCB Collector output capacitan...
Description	Silicon NPN epitaxial planer type(For low-frequency power amplification0
File Size	37.58K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1137
OCR Text	... Characteristecs 10 TC = 25C 8 6 DC Current Transfer Ratio vs. Collector Current 1,000 VCE = 5 V DC current transfer ratio hFE 300 TC = 75C 100 25C -25C 30 1.0 Collector current IC (A) 0.8 0.6 4 0.4 2 mA 0.2 IB = 0 0...
Description	Silicon NPN Transistor Silicon NPN Triple Diffused
File Size	30.23K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1163 2SD1163A
OCR Text	...* Tj Tstg 1 2SD1163 300 120 6 7 10 20 40 150 -55 to +150 2SD1163A 350 150 6 7 10 20 40 150 -55 to +150 Unit V V V A A A W C C Electrical Characteristics (Ta = 25C) 2SD1163 Item Collector cutoff current Symbol I CBO Min -- -- C...
Description	Silicon NPN Triple Diffused
File Size	31.45K / 6 Page	View it Online	Download Datasheet

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