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Integrated Silicon Solution, Inc.
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| Part No. |
IS71V08F64GS08-7085AI IS71V08F64GS08-7085BI
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| OCR Text |
...ipation: read current at 1 mhz: 7 ma maximum read current at 5 mhz: 18 ma maximum sleep mode: 5 a maximum simultaneous r/w operations (...4kw 15 64kb / 32kw 2 24mb 48 64kb / 32kw 3 24mb 48 64kb / 32kw 4 8mb 15 64kb / 32kw 8 8kb / 4kw note... |
| Description |
SPECIALTY MEMORY CIRCUIT, PBGA101 11 X 12 MM, BGA-101
SPECIALTY MEMORY CIRCUIT, PBGA73 8 X 11.60 MM, BGA-73
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| File Size |
215.81K /
47 Page |
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Atmel, Corp.
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| Part No. |
K8P2815UQB-DC4C0
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| OCR Text |
.... 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.9.1 0.9.2 0.9.3 0.9.4 1.0 remark target information target information target information target...4kw x 8 and 32kw x 31) bank 1: 48mbit (32kw x 96) bank 2: 48mbit (32kw x 96) bank 3: 16m... |
| Description |
8M X 16 FLASH 2.7V PROM, 65 ns, PBGA64 13 X 11 MM, 1 MM PITCH, FBGA-80/64
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| File Size |
871.83K /
56 Page |
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Analog Devices, Inc.
STMicroelectronics N.V.
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| Part No. |
K8P3215UQB-PE4B0 K8P3215UQB-DI4A0
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| OCR Text |
...is completed within typically 0.7 sec. the device requires 17ma as program/ erase current in the commercial and industrial temperature rang...4kw x 8 and 32kw x 7) bank 1: 12mbit (32kw x 24) bank 2: 12mbit (32kw x 24) bank 3: 4mbi... |
| Description |
2M X 16 FLASH 2.7V PROM, 60 ns, PDSO48 20 X 12 MM, PLASTIC, TSOP1-48
2M X 16 FLASH 2.7V PROM, 55 ns, PBGA48 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
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| File Size |
902.64K /
53 Page |
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http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
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| Part No. |
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY29LV320TF-12I HY29LV320TT-12I HY29LV320BF-12I HY29LV320TF-90 HY29LV320TF-90I HY29LV320TT-90I HY29LV320BF-90I HY29LV320BT-70I HY29LV320BT-80I HY29LV320TT-80I HYNIXSEMICONDUCTORINC-HY29LV320BT-80 HY29LV320TF-70I HY29LV320BF-70I HY29LV320BT-90
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| OCR Text |
7 to 3.6 volts ? ideal for battery-powered applications high performance ? 70, 80, 90 and 120 ns access time versions for full voltage ran...4kw, one 16kw and sixty-three 32kw sectors. hy29lv320t - a device with boot-sector archi- tecture... |
| Description |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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| File Size |
328.19K /
44 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5M29FB800VP-12 M5M29FB800FP-10 M5M29FT800FP-10 M5M29FB800FP-12
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| OCR Text |
... 7.5ms (typ.) program unit 128word auto erase erase time ...4kw parameter block1 4kw boot block 8kw address inputs /byte chip enable i... |
| Description |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
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| File Size |
145.96K /
14 Page |
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Price and Availability
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