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  79a Datasheet PDF File

For 79a Found Datasheets File :: 131    Search Time::1.375ms    
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    NE5500179A NE5500179A-T1

California Eastern Labs
Part No. NE5500179a NE5500179a-T1
OCR Text ... (Units in mm) PACKAGE OUTLINE 79a 4.2 Max 1.5 0.2 Source Source Gate 5.7 Max 0.6 0.15 Drain 0.8 0.15 4.4 Max Gate 1.0 Max Drain 1.2 Max 0.4 0.15 5.7 Max 0.9 0.2 0.2 0.1 0.8 Max 3.6 0.2 Bottom View DESC...
Description 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS

File Size 39.81K  /  5 Page

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    KU2307K

KEC(Korea Electronics)
Part No. KU2307K
OCR Text ...er. features v dss =30v, i d =79a. low drain to source on-state resistance. : r ds(on) =6.0m ? (max.) @ v gs =10v : r ds(on) =10.3m ? (max.) @ v gs =4.5v maximum rating (ta=25 unless otherwise noted) psop-8 dim millimeters a b d d1 c e e...
Description N-Ch Trench MOSFET

File Size 73.12K  /  4 Page

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    KU2307D

KEC(Korea Electronics)
Part No. KU2307D
OCR Text ...er. features v dss =30v, i d =79a. low drain to source on-state resistance. : r ds(on) =5.4m ? (max.) @ v gs =10v : r ds(on) =10.1m ? (max.) @ v gs =4.5v maximum rating (ta=25 unless otherwise noted) dpak (1) dim millimeters a a b b c c ...
Description N-Ch Trench MOSFET

File Size 51.84K  /  4 Page

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    IRFL214PBF

International Rectifier
Part No. IRFL214PBF
OCR Text ... RDS(on) = 2.0 G S ID = 0.79a Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 221.53K  /  9 Page

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    Duracell
California Eastern Laboratories
Part No. NE6510179a-A NE6510179a-T1
OCR Text ... (units in mm) package outline 79a electrical characteristics (t c = 25 c) part number ne6510179a package outline 79a symbols characteristics units min typ max test conditions p out output power dbm 31.5 32.5 g l linear gain 1 db 10.0 ...
Description NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

File Size 251.06K  /  10 Page

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    BU1506DX

Savantic, Inc.
Part No. BU1506DX
OCR Text ...uration voltage i c =3a; i b =0.79a 5.0 v v besat base-emitter saturation voltage i c =3a; i b =0.79a 1.1 v i ces collector cut-off current v ce =rated;v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb ...
Description Silicon NPN Power Transistors

File Size 201.88K  /  3 Page

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    BU1506DX

Inchange Semiconductor Company Limited
Part No. BU1506DX
OCR Text ...uration voltage i c =3a; i b =0.79a 5.0 v v besat base-emitter saturation voltage i c =3a; i b =0.79a 1.1 v i ces collector cut-off current v ce =rated;v be =0 t j =125 ?? 1.0 2.0 ma i ebo emitter cut-off current ...
Description Silicon NPN Power Transistors

File Size 112.83K  /  3 Page

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    KEC semiconductor
Part No. KU054N03D
OCR Text ... L FEATURES VDSS=30V, ID=79a. Low Drain to Source On-state Resistance. : RDS(ON)=5.4m (Max.) @ VGS=10V : RDS(ON)=10.1m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 +...
Description N-Ch Trench MOSFET

File Size 90.14K  /  4 Page

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    SMILE SOLAR ENERGY
Part No. SSR205BG SSR210BG
OCR Text ...t current, isc 7.56a 7.74a 7.79a 7.96a module efficiency 10.66 % 10.93% 11.19% 11.46% cell area efficiency 12.29% 12.60% 12.91% 13.22% stc: standard test condition, 1000w/m2, am 1.5, 2 5 electrical characteristic...
Description BIPV Solar Module

File Size 224.55K  /  3 Page

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