800v 16a pdf Datasheet P5 Full Text Search --- IC-ON-LINE


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800v 16a Datasheet PDF File

For 800v 16a Found Datasheets File :: 251 Search Time::4.094ms
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				Advanced Power Technology
Part No.	APT45GP120JDF2
OCR Text	...ction loss ? 50 khz operation @ 800v, 16a ? low gate charge ? 20 khz operation @ 800v, 30a ? ultrafast tail current shutoff ? rbsoa rated power mos 7 ? igbt g c e maximum ratings all ratings: t c = 25c unless otherwise specified. cautio...
Description	MOSFET
File Size	206.50K / 9 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2387
OCR Text	.... . . . . . . . . . . . . . . . 800v Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...16a Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	MOSFET N-Channel Enhancement Mode, High Speed Switch
File Size	23.05K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW07N120
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 47) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...16a 5V 20A IC, COLLECTOR CURRENT 4V IC=8A IC=4A 15A TJ=+150C TJ=+25C 10A TJ=-40C 3...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 快速IGBT在不扩散核武器条约与软，恢复快反平行快恢复二极管技 Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode IGBTs & DuoPacks - 7A 1200V TO247AC IGBT Diode
File Size	401.08K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH40KD
OCR Text	...= 25C ns 96 140 IC = 15A, VCC = 800v 220 330 VGE = 15V, RG = 10 1.31 -- Energy losses include "tail" 1.12 -- mJ and diode reverse recovery 2...16a t rr - (ns) 120 I F = 8 .0 A I F = 4 .0A I IR R M - (A ) I F = 1 6A I F = 8.0A 1...
Description	1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
File Size	214.26K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SGB07N120 SGP07N120
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 47) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...16a 5V 20A IC, COLLECTOR CURRENT 4V IC=8A IC=4A 15A TJ=+150C TJ=+25C 10A TJ=-40C 3...
Description	Fast IGBT in NPT-technology IGBTs & DuoPacks - 7A 1200V TO263AB SMD IGBT IGBTs & DuoPacks - 7A 1200V TO 220AB IGBT
File Size	382.09K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH40UDPBF
OCR Text	... TJ = 25C -- ns IC = 21A, VCC = 800v 150 VGE = 15V, RG = 10 360 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9...16a t rr - (ns) 120 I F = 8 .0 A I F = 4 .0A I IR R M - (A ) I F = 1 6A I F = 8.0A 1...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
File Size	669.34K / 11 Page	View it Online	Download Datasheet

				Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
Part No.	FS3VS-16a FS100SMJ-03
OCR Text	.................................. 800v rDS (ON) (MAX) ................................................................ 3.3 ID ...................16a HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description	Nch POWER MOSFET HIGH-SPEED SWITCHING USE 3 A, 800 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	44.22K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS5VS-16a
OCR Text	.................................. 800v rDS (ON) (MAX) ................................................................ 2.3 ID ...................16a HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	44.35K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors] Powerex, Inc.
Part No.	FS7UM-16a
OCR Text	.................................. 800v rDS (ON) (MAX) .............................................................. 1.64 ID ....................16a HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE AML31 Series, Solid State Pushbutton, Rectangular, Standard Bezel, Lighted, 1 Incandescent Lamp, DPST NO Form X , Alternate Action, Snap in panel mount 7 A, 800 V, 1.64 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	45.64K / 4 Page	View it Online	Download Datasheet

For 800v 16a Found Datasheets File :: 251 Search Time::4.094ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |