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  959.5 Datasheet PDF File

For 959.5 Found Datasheets File :: 802    Search Time::2.891ms    
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    PTF080101S

Infineon Technologies AG
Part No. PTF080101S
OCR Text 959.8 mhz 0 1 2 3 4 5 28 30 32 34 36 38 output power (dbm) rms evm (average %) . 0 10 20 30 40 50 drain efficiency (%) evm efficiency t case = 25c t case = 85c ptf080101s features ? thermally-enhanced packaging ? broadband internal matc...
Description Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

File Size 164.70K  /  9 Page

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    TRIQUINT SEMICONDUCTOR INC
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
Part No. TGS2304-SCC TGS2304
OCR Text ...-161 -154 -156 0.962 0.963 0.959 0.959 0.961 0.960 0.957 0.955 0.955 0.951 0.948 0.945 0.940 0.937 0.935 0.935 0.932 0.938 0.937 0.937 0....5 0.5 0.5 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.7 0.7 0.7 0.7 0.7 0.7 0.8 0.8 0.8 0.9 0.9 0.9 1....
Description DC- 20 GHz SP4T PIN Switch

File Size 1,090.38K  /  16 Page

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    PTFB090901FA PTFB090901EA

Infineon Technologies AG
Part No. PTFB090901FA PTFB090901EA
OCR Text ...= 650 ma, ? 1 = 960 mhz, ? 2 = 959 mhz 3rd order imd 0 10 20 -55 -45 33 36 39 42 45 48 51 eff i i m output power, pep (dbm) efficiency b090901 gr 8 typical performance (cont.) 30 40 50 60 70 18 19 20 21 22 i ency (%) a in (db) cw power ...
Description Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

File Size 227.02K  /  14 Page

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    CPL-WB-01C2

STMicroelectronics
Part No. CPL-WB-01C2
OCR Text ...1 1766 1632 1497 1362 1228 1093 959 824 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 -0.0 f (mhz) db 2170 2035 1901 1766 1632 1497 1362 1228 1093 959 82...5. cpw lines (w = 850 m with gap to gnd = 260 m) on top layer + gnd on bottom layer material: 2 l...
Description Wide band directional coupler with ISO port

File Size 434.03K  /  8 Page

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    RD07MVS1B RD07MVS1B10

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B RD07MVS1B10
OCR Text ...1 0.002 -59.3 0.948 178.3 950 0.959 173.4 0.225 8.1 0.002 -54.8 0.947 177.7 1000 0.959 172.9 0.204 6.3 0.001 -47.5 0.952 177.2 1050 0.959 172.7 0.186 5.3 0.001 -34.8 0.951 177.2 1100 0.959 172.5 0.170 3.9 0.001 -14.2 0.952 176.5 s11 s21 s12...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 205.51K  /  9 Page

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    RD07MVS1B11

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B11
OCR Text ...1 0.002 -59.3 0.948 178.3 950 0.959 173.4 0.225 8.1 0.002 -54.8 0.947 177.7 1000 0.959 172.9 0.204 6.3 0.001 -47.5 0.952 177.2 1050 0.959 172.7 0.186 5.3 0.001 -34.8 0.951 177.2 1100 0.959 172.5 0.170 3.9 0.001 -14.2 0.952 176.5 s11 s21 s12...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 415.52K  /  9 Page

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    MGF0909A MGF0909 0909A

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0909A MGF0909 0909A
OCR Text ...0.965 0.964 0.963 0.961 0.960 0.959 0.959 0.959 0.958 0.958 0.957 0.958 0.958 0.957 0.956 0.954 0.954 0.953 0.953 0.953 0.948 0.956 0.944 S11 Angle(deg.) -155.5 -159.7 -163.4 -166.8 -168.4 -171.3 -173.8 -175.4 -176.8 -178.7 -179.7 178.4 177...
Description MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system

File Size 22.09K  /  3 Page

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    PTFA091201F PTFA091201E

Infineon Technologies AG
Part No. PTFA091201F PTFA091201E
OCR Text ...dd = 28 v, i dq = 750 ma, ? = 959.8 mhz -90 -80 -70 -60 -50 -40 -30 -20 -10 0 36 38 40 42 44 46 48 50 output power, avg. (dbm) modulation ...5 ? % modulation spectrum @ 400 khz acpr ? ?62 ? dbc modulation spectrum @ 600 khz acpr ? ?74 ? dbc ...
Description Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz

File Size 255.97K  /  10 Page

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    Mitsubishi Electric Corporation
Part No. MH16S72DDFA-8 MH16S72DDFA-7
OCR Text 959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram mh16s72ddfa-7, -8 15 /oct./1999 mit-ds-0347-0.1 preliminary spec. some ...5 dq3 47 dqmb3 89 dq35 131 dqmb7 6 vdd 48 nc 90 vdd 132 nc 7 dq4 49 vdd 91 dq36 133 vdd 8 dq5 50 nc ...
Description 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 998.31K  /  56 Page

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    Mitsubishi Electric Corporation
Part No. MH16S72DCFA-6
OCR Text 959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram mh16s72dcfa-6 15 /oct. /1999 mit-ds-0349-0.1 mitsubishi lsis prelimina...5.4ns (cl = 4 at latch mode) mh16s72dcfa-6 utilizes industry standard 16m x 4 synchronous drams in...
Description 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 987.44K  /  56 Page

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