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BTS4140 07910 2SC23 SSG25C60 BU2527A BGD704N 70181 W83877AF
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  9a. Datasheet PDF File

For 9a. Found Datasheets File :: 5982    Search Time::1.235ms    
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    Advanced Power Electronics
Part No. AP9973GS-3
OCR Text ...istanc e 2 v g s = 10v, i d = 9a - - 80 mw v g s = 4.5v, i d = 6a - - 100 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward tra...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 330.34K  /  6 Page

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    AK8139A

Asahi Kasei Microsystems
Asahi Kasei Microsystem...
Part No. AK8139A
OCR Text 9a 2 6m hz clock source multi clock generator ak813 9a ? pll i `?? ??` ic ? 26.000m hz ? ? ??????r????? L ??R 1.7 v - 2 . 0 v (pll ? ) 1.7v - 3.6v ( ) M `?r 7.9 u a ( t...
Description 26MHz Clock Source Multi Clock Generator

File Size 346.52K  /  12 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ... ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55C VDS = -24V, V...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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    W9AS1D52-12

List of Unclassifed Manufacturers
Part No. W9AS1D52-12
OCR Text ... magnecraft solution guide 105a 9a miniature power relays/ spst and spdt 30 amp rating (dc and ac) units a v resistive resistive hp hp pilot duty ma v v va w (resistive) ms v v c c g-n g-n grams minimum % of nominal operations @ rated curre...
Description 9A Miniature Power Relays/SPST and SPDT 30 Amp Rating (DC and AC)

File Size 217.21K  /  4 Page

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    IRFL014N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFL014N
OCR Text ...che Rated D G S ID = 1.9A Description Fifth Generation HEXFET(R) MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...
Description 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管)
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)

File Size 140.28K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. KDC6020C
OCR Text ... nn el o v d s = 20 v i d = 5. 9a ?? r d s ( o n ) ? 2 7 m |? ( v g s = 4 . 5v ) ?? r d s ( o n ) ? 3 9 m |? ( v g s = 2 . 5v ) ?? p - c ha nn el o v d s = - 20 v i d = - 4. 2a ?? r d s ( o n ) ? 5 5 m |? ( v g s ...
Description N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m

File Size 296.74K  /  2 Page

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    AP9973GM

Advanced Power Electronics Corp.
Part No. AP9973GM
OCR Text ... surface mount package i d 3.9a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 59.10K  /  4 Page

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    AP9973GI

Advanced Power Electronics Corp.
Part No. AP9973GI
OCR Text ...on-resistance 2 v gs =10v, i d =9a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =9a - 8.6 - s i dss drain-source leakage current v ds...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 116.48K  /  5 Page

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    IRHF7330SE

International Rectifier
Part No. IRHF7330SE
OCR Text ...e 1.2 w v gs = 12v, i d = 1.9a on-state resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.3 s ( )v ds > 15v, i ds = 1.9a ? i dss zero gate voltage drain current 5...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 娌?? ???浠舵?搴?Rad Hard HEXFET????朵?绠々

File Size 94.41K  /  8 Page

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