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10MHZ HD74AL 170M2609 MDT10P74 RLZ11B W005M A0500 HE82015
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    IRF2903ZPBF

International Rectifier
Part No. IRF2903ZPBF
OCR Text ...@ TC = 25C IDM PD @TC = 25C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package L...
Description AUTOMOTIVE MOSFET

File Size 280.47K  /  10 Page

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    IRIS-A6351

IRF[International Rectifier]
Part No. IRIS-A6351
OCR Text ...s 8 2.36 8 2.36 Units A A EAS Vin Vth PD1 PD2 TF Top Tstg Tch Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 ...
Description INTEGRATED SWITCHER

File Size 383.86K  /  7 Page

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    SRF55V02PMCC8 SRF55V02PY2.0 SRF55V02P SRF55V02PC SRF55V02PY1.0

Infineon Technologies A...
Infineon Technologies AG
Part No. SRF55V02PMCC8 SRF55V02PY2.0 SRF55V02P SRF55V02PC SRF55V02PY1.0
OCR Text ... existing infrastructure On/Off EAS switch feature Each page in User Area configurable as a Counter Support of Anti-Tearing Carrier frequency: 13.56 MHz up to 26 kbit/s data rate transfer Anticollision method complying with ISO/IEC 15693 wi...
Description    Security & Chip Card ICs (my-d vicinity)
SWITCH
Security & Chip Card ICs (my-d vicinity) 安全

File Size 156.34K  /  9 Page

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    SRF55V02SMCC8 SRF55V02S SRF55V02SC SRF55V02SY1.0 SRF55V02SY2.0

Infineon Technologies AG
Infineon Technologies A...
Part No. SRF55V02SMCC8 SRF55V02S SRF55V02SC SRF55V02SY1.0 SRF55V02SY2.0
OCR Text ... existing infrastructure On/Off EAS switch feature Each page in User Area configurable as a Counter Support of Anti-Tearing 2-way (mutual) authentication with 64-bit secret key between reader and label 2 keys for each sector allow hierarchi...
Description    Security & Chip Card ICs (my-d vicinity)
SWITCH

File Size 161.38K  /  10 Page

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    SSDF9510 SSDF9510-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSDF9510 SSDF9510-15
OCR Text ... product requir ement , 100% eas guaranteed with full function reliability approved. features low gate charge low on-resistance marking code package information absolute maximum ratings (t ...
Description N And P-Channel Enhancement Mode Power MOSFET

File Size 1,135.01K  /  7 Page

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...ping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces electrome...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BSD223P

Infineon Technologies A...
Infineon Technologies AG
Philips Semiconductors
Part No. BSD223P
OCR Text ...rain current TA=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg -1.56 1.4 -6 12 0.25 -55... +150 55/150/56 mJ kV/s V W C Avalanche energy, single pulse ID =-0.39 A , VDD =-10V, RGS =25 Reverse diode dv/dt IS =-0.39A, VDS =-16V, di/d...
Description Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
OptiMOS -P Small-Signal-Transistor
CHOKE RF COATED 1.8UH 10%

File Size 73.41K  /  8 Page

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    IRFB4321PBF

International Rectifier
Part No. IRFB4321PBF
OCR Text ... TC = 100C IDM PD @TC = 25C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Vol...
Description HEXFET Power MOSFET

File Size 280.61K  /  8 Page

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    IRF1503PBF

International Rectifier
Part No. IRF1503PBF
OCR Text ...@ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Curren...
Description AUTOMOTIVE MOSFET

File Size 161.87K  /  9 Page

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    Infineon
Part No. 11N60S5
OCR Text ...= 5.5 A, VDD = 50 V I D puls EAS 22 340 0.6 11 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate sou...
Description Cool MOS Power Transistor

File Size 335.59K  /  13 Page

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