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    EL6295CJ EL6265C

Elantec Semiconductor
Part No. EL6295CJ EL6265C
OCR Text ...nel. An auto-zero input brought high after power up reduces the output offsets to less than 10mV. Each amplifier output can typically sink o...speed instrumentation Connection Diagram 32 COUT 31 BOUT 30 AOUT 29 GND 28 GOUT 27 FOUT 26 EOUT ...
Description 13 Channel, 60MHz, Switched Gain Pre-Amp

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    HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM62

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM6264BLP-XXL HM6264BLSP-XXL HM6264BLFP-XXLT
OCR Text ...l plastic DIP, is available for high density mounting. Features * High speed fast access time: 85/100 ns (max) * Low power Standby: 10 W (typ) Operation: 15 mW (typ) (f = 1 MHz) * Single 5 V supply * Completely static memory No clock or...
Description Low Power SRAMs
IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
64 k SRAM (8-kword x 8-bit)
Data Selectors/Multiplexers 20-LCCC -55 to 125

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    IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT

IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
Part No. IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT162646ATPFB IDT54FCT162646ATPV IDT54FCT162646ATPVB IDT54FCT162646CT IDT54FCT162646CTE IDT54FCT162646CTEB IDT54FCT162646CTPA IDT54FCT162646CTPAB IDT54FCT162646CTPF IDT54FCT162646CTPFB IDT54FCT162646CTPV IDT54FCT162646CTPVB IDT54FCT162646ET IDT54FCT162646ETE IDT54FCT162646ETEB IDT54FCT162646ETPA IDT54FCT162646ETPAB IDT54FCT162646ETPF IDT54FCT162646ETPFB IDT54FCT162646ETPV IDT54FCT162646ETPVB IDT54FCT162646T IDT54FCT162646TE IDT54FCT162646TEB IDT54FCT162646TPA IDT54FCT162646TPAB IDT54FCT162646TPF IDT54FCT162646TPFB IDT54FCT16646TPVB IDT54FCT162646TPV IDT54FCT162646TPVB IDT54FCT16646AT IDT54FCT16646ATE IDT54FCT16646ATEB IDT54FCT16646ATPA IDT54FCT16646ATPAB IDT54FCT16646ATPF IDT54FCT16646ATPFB IDT54FCT16646ATPV IDT54FCT16646ATPVB IDT54FCT16646CT IDT54FCT16646CTE IDT54FCT16646CTEB IDT54FCT16646CTPA IDT54FCT16646CTPAB IDT54FCT16646CTPF IDT54FCT16646CTPFB IDT54FCT16646CTPV IDT54FCT16646CTPVB IDT54FCT16646ET IDT54FCT16646ETEB IDT54FCT16646ETPA IDT54FCT16646ETPAB IDT54FCT16646ETPF IDT54FCT16646ETPFB IDT54FCT16646ETPV IDT54FCT16646ETPVB IDT54FCT16646T IDT54FCT16646TE IDT54FC
OCR Text ...al metal CMOS technology. These high-speed, low-power devices are organized as two independent 8-bit bus transceivers with 3-state D-type registers. The control circuitry is organized for multiplexed transmission of data between A bus and B...
Description    fast CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE)
CAP 33UF 6V 20% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-4000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL SN/PB5% LOWESR-3000
CAP 33UF 4V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3500
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-400
fast CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE) 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 50V 20% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-700 快速CMOS 16位总线收发寄存器(3态)
CAP 100UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-150 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 35V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for lowprofil...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010NL) is available for lowprofil...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1310NL) is available for lowprofil...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ge. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute M...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for lowprofile...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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