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T0790 06PBF LA1145 33TQCN 10200 05S07 4759A L1018
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  id-5.6a Datasheet PDF File

For id-5.6a Found Datasheets File :: 3751    Search Time::2.125ms    
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    IRF7380

International Rectifier
Part No. IRF7380
OCR Text ... RDS(on) max 73m@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Incl...5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 100C I...
Description 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
High frequency DC-DC converters

File Size 503.95K  /  8 Page

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    Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQI3N90 FQB3N90 FQB3N90TM FQI3N90TU
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...5 seconds Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-C...
Description 900V N-Channel MOSFET(漏源电压900V的N沟道增强型MOSFET)
900V N-Channel QFET

File Size 695.82K  /  9 Page

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    IRLL110 IRLL110TR

IRF[International Rectifier]
Part No. IRLL110 IRLL110TR
OCR Text ...= 100V RDS(on) = 0.54 G S ID = 1.5A Description Third Generation HEXFETs from International Rectifier provide the designer with th...5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current Power Dissipation Power Dissipatio...
Description 1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

File Size 213.54K  /  8 Page

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    13N80

Fairchild Semiconductor
Part No. 13N80
OCR Text ...e Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (...5 seconds 1100 12.6 30 4.0 300 2.38 -55 to +150 300 Thermal Characteristics Symbol RJC RCS R...
Description Search --To FQA13N80

File Size 859.86K  /  9 Page

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    13N06L

Fairchild Semiconductor
Part No. 13N06L
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...5 7.0 3.75 45 0.3 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = 25C) - Derate above 25C ...
Description Search --To FQB13N06L

File Size 694.21K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...5 73 0.58 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead...
Description 400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series

File Size 660.38K  /  9 Page

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    CEF07N7 CEB07N7

Chino-Excel Technology
Part No. CEF07N7 CEB07N7
OCR Text ...V 700V 700V RDS(ON) 1.5 1.5 1.5 ID 6.6A 6.6A 6.6A d @VGS 10V 10V 10V CEP07N7/CEB07N7 CEF07N7 PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 409.65K  /  4 Page

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    ZXM61P03 ZXM61P03F ZXM61P03FTA ZXM61P03FTC

ZETEX[Zetex Semiconductors]
Part No. ZXM61P03 ZXM61P03F ZXM61P03FTA ZXM61P03FTC
OCR Text ID=-1.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low o...5 806 6.4 -55 to +150 UNIT V V A A A A mW mW/C mW mW/C C THERMAL RESISTANCE PARAMETER Junction t...
Description P-channel MOSFET
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-99; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No

File Size 228.84K  /  7 Page

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    ZXM62P02E6 ZXM62P02E6TA ZXM62P02E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXM62P02E6 ZXM62P02E6TA ZXM62P02E6TC
OCR Text ID=-2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low o...5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transi...
Description P-channel MOSFET
20V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 203.03K  /  7 Page

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    ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC
OCR Text ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low o...5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transi...
Description P-channel MOSFET
30V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 204.43K  /  7 Page

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