...be activated during row address latch time. Selects bank for read / write during column address latch time.
DQ0~DQ7 Data L(U)DQM Data Mas...4.6 -1.0 ~ 4.6 -55 ~ +150 1 50
ADS7608A4A
Unit V V W mA
Note : Permanent device damage may...
Description
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
...be activated during row address latch time. Selects bank for read / write during column address latch time.
DQ0~DQ15 Data L(U)DQM Data Ma...4.6 -55 ~ +150 1 50
ADS7616A4A
Unit V V W mA
Note : Permanent device damage may occur if A...
Description
Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行)
...rogramming time of 16 seconds s latch-up protected to 100 mA from -1 V to VCC + 1 V s High noise immunity s Versatile features for simple in...4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC NC A14 A13 A8 A...
Description
1 Megabit (128 K x 8-Bit) CMOS EPROM 1兆位128亩8位)的CMOS存储 Octal Buffers And Line Drivers With 3-State Outputs 20-SOIC 0 to 70 128K X 8 OTPROM, 45 ns, PQCC32 Octal Buffers And Line Drivers With 3-State Outputs 20-SOIC 0 to 70 128K X 8 OTPROM, 45 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS EPROM 1兆位28亩8位)的CMOS存储 Octal Buffers And Line Drivers With 3-State Outputs 20-PDIP 0 to 70 Octal buffers and line drivers 20-PDIP 0 to 70 Quad bus transceivers 14-SOIC 0 to 70 Octal Buffers And Line Drivers With 3-State Outputs 20-SO 0 to 70 Octal buffers and line drivers 20-SO 0 to 70 1 megabit CMOS EPROM 1 Megabit (128 K x 8-Bit) CMOS EPROM
...rogramming time of 32 seconds s latch-up protected to 100 mA from -1 V to VCC + 1 V s High noise immunity s Compact 32-pin DIP, PDIP, and PL...4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A17 A14 A13 A8 ...
Description
2 Megabit (256 K x 8-Bit) CMOS EPROM Octal bus transceivers 20-SSOP 0 to 70 Octal Buffers And Line Drivers With 3-State Outputs 20-SO 0 to 70 2兆位56亩8位)的CMOS存储 2 Megabit (256 K x 8-Bit) CMOS EPROM 256K X 8 UVPROM, 55 ns, CDIP32 Octal Buffers And Line Drivers With 3-State Outputs 20-SOIC 0 to 70 2兆位56亩8位)的CMOS存储 Octal bus transceivers 20-SOIC 0 to 70 256K X 8 OTPROM, 55 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS EPROM 2兆位256亩8位)的CMOS存储 BCD-To-Seven-Segment Decoders/Drivers 16-SOIC 0 to 70 2兆位256亩8位)的CMOS存储 2 Megabit (256 K x 8-Bit) CMOS EPROM 2兆位56亩8位)的CMOS存储 Octal Buffers And Line Drivers With 3-State Outputs 20-PDIP 0 to 70 Octal Buffers And Line Drivers With 3-State Outputs 20-SSOP 0 to 70 RES 1.5K-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 megabit CMOS EPROM
...e and erase voltage 12.0 V 5% s latch-up protected to 100 mA from -1 V to VCC +1 V s Embedded Erase Electrical Bulk Chip Erase -- 5 seconds ...4 seconds typical chip program s Command register architecture for microprocessor/microcontroller co...
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
...e and erase voltage 12.0 V 5% s latch-up protected to 100 mA from -1 V to V CC +1 V s FlasheraseTM Electrical Bulk Chip-Erase -- One second ...4 5 6 7 8 9 10 11 12 13 14 15 16
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
WE# (W#) NC A14 ...
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
...e and erase voltage 12.0 V 5% s latch-up protected to 100 mA from -1 V to V CC +1 V s Flasherase Electrical Bulk Chip-Erase -- One second ty...4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC
PLCC
WE# (W...
Description
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory