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  necs c to x b n-channel gaas m Datasheet PDF File

For necs c to x b n-channel gaas m Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    FUJITSU LTD<br>EUDYNA[Eudyna Devices Inc]<br>
Part No. FLU17xm
Description L bAND, gaas, N-cHANNEL, RF SmALL SIGNAL, JFET<br>L-band medium & High Power gaas FET<br>
File Size 77.66K  /  4 Page

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    MGFC39V3742A04 MGFC39V3742A

mITSUbISHI[mitsubishi Electric Semiconductor]<br>
Part No. mGFc39V3742A04 mGFc39V3742A
Description c bAND, gaas, N-cHANNEL, RF POWER, JFET<br>3.7 ~ 4.2GHz bAND 8W INTERNALLY mATcHED gaas FET<br>
File Size 180.26K  /  2 Page

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    NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D NEZ3642-15DD NEZ6472-15D NEZ5964-15D NEZ5964-15DD NEZ6472-15DD

NEc, corp.<br>NEc corp.<br>NEc[NEc]<br>
Part No. NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D NEZ3642-15DD NEZ6472-15D NEZ5964-15D NEZ5964-15DD NEZ6472-15DD
Description 20 characters x 4 Lines, 5x7 Dot matric character and cursor 15瓦c波段砷化镓场效应管N沟道砷化镓场效应晶体<br>15 W c-bAND POWER gaas FET N-cHANNEL gaas mES FET<br>
File Size 67.49K  /  12 Page

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    SHF-0189 SHF-0189Z

SIRENZA mIcRODEVIcES INc<br>List of Unclassifed manufacturers<br>ETc[ETc]<br>SIRENZA[SIRENZA mIcRODEVIcES]<br>
Part No. SHF-0189 SHF-0189Z
Description c bAND, gaas, N-cHANNEL, RF SmALL SIGNAL, HFET<br>0.05 - 6 GHz, 0.5 Watt gaas HFET<br>
File Size 96.07K  /  4 Page

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    CF739 Q62702-F1215

Siemens Semiconductor G...<br>Siemens Semiconductor Group<br>Infineon<br>SIEmENS AG<br>
Part No. cF739 Q62702-F1215
Description From old datasheet system<br>gaas FET (N-channel dual-gate gaas mES FET)<br>
File Size 138.44K  /  7 Page

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    UPG2214TB-E4-A

NEc corp.<br>
Part No. UPG2214Tb-E4-A
Description 50 mHz - 3000 mHz RF/mIcROWAVE SGL POLE DOUbLE THROW SWITcH, 0.65 db INSERTION LOSS<br>2-WIRE FActoRY PROGRAmmED W/TIN PLATING<br>color='#FF0000'>necs W LOW VOLTAGE L/ S-bAND SPDT SWITcH<br>color='#FF0000'>necs ?W LOW VOLTAGE L, S-bAND SPDT SWITcH<br>
File Size 391.08K  /  11 Page

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    TIM5964-6UL

toshiba Semiconductor<br>toshiba corporation<br>
Part No. TIm5964-6UL
Description c bAND, gaas, N-cHANNEL, RF POWER, mOSFET<br>mIcROWAVE POWER gaas FET<br>
File Size 146.96K  /  4 Page

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    NEc corp.<br>NEc[NEc]<br>
Part No. NES1821b-30
Description 30W L-bAND POWER gaas FET N-cHANNEL gaas mES FET<br>
File Size 44.61K  /  8 Page

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    NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4450-4D NEZ4450-4DD NEZ4450-8D NEZ4450-8DD NEZ3642-4D NEZ3642-8D NEZ364

NEc, corp.<br>NEc corp.<br>NEc[NEc]<br>http://<br>
Part No. NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4450-4D NEZ4450-4DD NEZ4450-8D NEZ4450-8DD NEZ3642-4D NEZ3642-8D NEZ3642-8DD NEZ6472-8DD NEZ6472-4DD NEZ6472-4D NEZ7177-4D NEZ7177-8DD NEZ5964-4D NEZ5964-4DD NEZ5964-8D NEZ5964-8DD NEZ6472-8D NEZ7177-4DD NEZ7177-8D
Description &nbsp;&nbsp;&nbsp;4W/8W c-bAND POWER gaas FET N-cHANNEL gaas mES FET<br>4W/8W c-bAND POWER gaas FET N-cHANNEL gaas mES FET 4W/8W c波段砷化镓场效应管N沟道砷化镓场效应晶体<br>cAP 15UF 16V 10% TANT SmD-6032-28 TR-7<br>cAP TANTALUm 1.5UF 35V 10% SmD<br>20 characters x 4 Lines, 5x7 Dot matric character and cursor<br>VARIStoR, 300VAc; Series:VE; Voltage rating, Ac:300V; Suppressor type:Varistors; Voltage rating, Dc:385V; current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS compliant: Yes<br>
File Size 106.86K  /  18 Page

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    NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500199 NE8500199 NE85001

NEc corp.<br>NEc[NEc]<br>
Part No. NE8500100 NE8500100-RG NE8500100-Wb NE500100 NE500199 NE8500199 NE85001
Description 1 W c-bAND POWER gaas FET N-cHANNEL gaas mES FET<br>
File Size 39.83K  /  6 Page

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For necs c to x b n-channel gaas m Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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