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NEC[NEC]
|
| Part No. |
2SK3577 2SK3577-T1B 2SK3577-T2B
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| OCR Text |
...re Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec.
PT2 Tch Tstg
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protecto... |
| Description |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
| File Size |
69.07K /
8 Page |
 View
it Online |
Download Datasheet
|
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NEC[NEC]
|
| Part No. |
2SK3576 2SK3576-T1B 2SK3576-T2B
|
| OCR Text |
...re Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec.
PT2 Tch Tstg
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protecto... |
| Description |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
| File Size |
65.26K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC, Corp.
NEC[NEC]
|
| Part No. |
2SJ626 2SJ626-T1B 2SJ626-T2B
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| OCR Text |
...re Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. Remark
Note2
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device ac... |
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
63.69K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC[NEC]
|
| Part No. |
2SJ625 2SJ625-T1B 2SJ625-T2B
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| OCR Text |
...re Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec.
Note2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually use... |
| Description |
Pch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
| File Size |
64.29K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC, Corp.
NEC[NEC]
|
| Part No. |
2SJ624 2SJ624-T1B 2SJ624-T2B
|
| OCR Text |
...re Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec.
Note2
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device ac... |
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
69.46K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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