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![1N829UR MLL821 1N822AUR 1N822AUR-1 1N829UR-1TR 1N828AUR 1N828AUR-1 1N828AUR-1TR 1N821AUR-1TR 1N827UR MLL829TR-1 1N821AUR](Maker_logo/microsemi_corporation.GIF)
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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Part No. |
1N829UR MLL821 1N822AUR 1N822AUR-1 1N829UR-1TR 1N828AUR 1N828AUR-1 1N828AUR-1TR 1N821AUR-1TR 1N827UR MLL829TR-1 1N821AUR 1N821AUR-1 1N821AURTR 1N821AURTR-1 1N821UR 1N821UR-1 1N821UR-1TR 1N821URTR 1N821URTR-1 1N822AUR-1TR 1N822AURTR 1N822AURTR-1 1N822UR 1N822UR-1 1N822UR-1TR 1N822URTR 1N822URTR-1 1N823AUR 1N823AUR-1 1N823AUR-1TR 1N823AURTR 1N823AURTR-1 1N823UR 1N823UR-1 1N823UR-1TR 1N823URTR 1N823URTR-1 1N824AUR 1N824AUR-1 1N824AUR-1TR 1N824AURTR 1N824AURTR-1 1N824UR 1N824UR-1 1N824UR-1TR 1N824URTR 1N824URTR-1 1N825AUR 1N825AUR-1 1N825AUR-1TR 1N825AURTR 1N825AURTR-1 1N825UR 1N825UR-1 1N825UR-1TR 1N825URTR 1N825URTR-1 1N826AUR 1N826AUR-1 1N826AUR-1TR 1N826AURTR 1N826AURTR-1 1N826UR 1N826UR-1 1N826UR-1TR 1N826URTR 1N826URTR-1 1N827AUR 1N827AUR-1 1N827AUR-1TR 1N827AURTR-1 1N827UR-1 1N827UR-1TR 1N827URTR 1N827URTR-1 1N828AURTR 1N828AURTR-1 1N828UR 1N828UR-1TR 1N828URTR 1N828URTR-1 1N829AUR 1N829AUR-1 1N829AUR-1TR 1N829AURTR 1N829AURTR-1 1N829UR-1 1N829URTR 1N829URTR-1 JAN1N821AUR JAN1N821AUR-1 JAN1N821AUR-1TR JAN1N821AURTR JAN1N821AURTR-1 JAN1N821UR JAN1N821UR-1 JAN1N821UR-1TR JAN1N821URTR JAN1N821URTR-1 JAN1N822AUR JAN1N822AUR-1 JAN1N822AUR-1TR JAN1N822AURTR JAN1N822AURTR-1 JAN1N822UR
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Description |
From old datasheet system 6.2 & 6.55 volt Temperature Compensated Surface Mount Zener Reference Diodes 6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN Triac; Thyristor Type:Snubberless; peak repetitive off-state voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes 3.3 V quad buffer; 3-state - Description: 3.3V Buffer/Line Driver with Active LOW Output Enable (3-State) ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.9@3.3V ns; voltage: 2.7-3.6 V Single Supply voltage Supervisor for 5V Systems with Programmable Time Delay 8-PDIP -40 to 85 Single Supply voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC 0 to 70 Triac; Thyristor Type:Standard; peak repetitive off-state voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; peak repetitive off-state voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 6.2 & 6.55 volt Temperature Compensated Surface Mount Zener Reference Diodes 6.55 V, SILICON, voltAGE REFERENCE DIODE, DO-213AA 3.3 V Quad 2-input NAND gate - Description: 3.3V Quad 2-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.7@3.3V ns; voltage: 2.7-3.6 V 6.2 6.2 & 6.55 volt Temperature Compensated Surface Mount Zener Reference Diodes 6.2 V, SILICON, voltAGE REFERENCE DIODE, DO-213AA Single Supply voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC -40 to 85 6.2 Single Supply voltage Supervisor for 5V Systems with Programmable Time Delay 8-SOIC 0 to 70 6.2 SOCKET, D, PCB, STRAIGHT, 9WAY; Connector type:D Sub; Gender:Socket; Ways, No. of:9; Mating cycles, No. of:500; Termination method:Straight PCB; Material, contact:Copper alloy; Material:Steel; Contacts, No. of:9; Material, RoHS Compliant: Yes 6.2 0TC Reference voltage Zener
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File Size |
184.26K /
3 Page |
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Microchip Technology, Inc.
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Part No. |
Z86C95-20AEC
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Description |
Triac; Thyristor Type:Sensitive Gate; peak repetitive off-state voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
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File Size |
4,215.07K /
79 Page |
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NTE[NTE Electronics]
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Part No. |
NTE5548 NTE5541 NTE5545
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Description |
Silicon controlled rectifier (SCR). repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. Silicon Controlled Rectifier (SCR) 35 Amp
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File Size |
18.33K /
2 Page |
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NTE[NTE Electronics]
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Part No. |
NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704
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Description |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
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File Size |
60.29K /
4 Page |
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Microchip Technology, Inc. Electronic Theatre Controls, Inc.
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Part No. |
STK13C68-C25 STK13C68-5S25 STK13C68-5S45 STK13C68-5S35 STK13C68-S30I STK13C68-S35 STK13C68-5S35I STK13C68-S25 STK13C68-S45 STK13C68-S35I STK13C68-5S30I STK13C68-5S25I STK13C68-S45I STK13C68-5S45I STK13C68-S25I STK13C68-P30I STK13C68-5P45 STK13C68-5P25I
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Description |
FUSE 5A SLO-BLO PICO SCR Thyristor; SCR Type:Sensitive Gate; peak repetitive off-state voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; peak Non repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA SCR Thyristor; SCR Type:Sensitive Gate; peak repetitive off-state voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; peak Non repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:50uA PC Board Fuse; Current Rating:250mA; voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Very Fast Acting; Leaded Process Compatible:No PC Board Fuse; Current Rating:500mA; voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Very Fast Acting; Leaded Process Compatible:No PC Board Fuse; Current Rating:500mA; voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Time Delay; Leaded Process Compatible:No; peak Reflow Compatible (260 C):No PC Board Fuse; Current Rating:375mA; voltage Rating:125V; Fuse Terminals:SMT Caps; Body Material:Ceramic; Fuse Size/Group:6.10 x 2.69 x 2.69mm; Fuse Type:Time Delay; Leaded Process Compatible:No; peak Reflow Compatible (260 C):No Cartridge Fuse; Current Rating:0.062A; voltage Rating:125V; Fuse Type:Very Fast Acting; Leaded Process Compatible:No; peak Reflow Compatible (260 C):No; voltage Rating:125V RoHS Compliant: No NVRAM (EEPROM Based) NVRAM中(EEPROM的基础
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File Size |
280.13K /
8 Page |
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![BY329-1500 BY329-1500S](Maker_logo/philips_semiconductors.GIF)
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
BY329-1500 BY329-1500S
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Description |
Damper diode fast/ high-voltage Triac; Thyristor Type:Snubberless; peak repetitive off-state voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Logic Level; peak repetitive off-state voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes Damper diode fast, high-voltage
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File Size |
35.48K /
5 Page |
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NTE[NTE Electronics]
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Part No. |
NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
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Description |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
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File Size |
23.18K /
2 Page |
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it Online |
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Price and Availability
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