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For rez Found Datasheets File :: 80    Search Time::1.719ms    
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    Atmel
Part No. TSC21020F 21020F
OCR Text ...age 27.) D D D D rez-LAB and EZ-ICE are registered trademarks of Analog Devices, Inc. Additional Information This data sheet provides a general overview of TSC21020F functionality. For additional information on the archit...
Description Radiation Tolerant 32/40?Bit IEEE Floating?Point DSP Microprocessor
From old datasheet system

File Size 485.14K  /  37 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM53216004BV
OCR Text ...ffer turn off delay from ras t rez 3 13 3 15 ns 6,12 output buffer turn off delay from w t wez 3 13 3 15 ns 6 w to data delay t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2....
Description 16M x 32 DRAM SIMM(16M x 32 动RAM模块)

File Size 387.83K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM53232004BV
OCR Text ...ffer turn off delay from ras t rez 3 13 3 15 ns 6,12 output buffer turn off delay from w t wez 3 13 3 15 ns 6 w to data delay t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2....
Description 32M x 32 DRAM SIMM(32M x 32 动RAM模块)

File Size 401.25K  /  20 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5117805F-70TS-K MSM5117805F-XXTS-K MSM5117805F-50TS-K MSM5117805F-70JS
OCR Text ...t buffer turn- off delay time t rez 013015020ns7,8 oe to data output buffer turn-off delay time t oez 013015020ns7 we to data output buffer turn- off delay time t wez 013015020ns7 transition time t t 150150150ns3 refresh period t ref ? 32...
Description 2,097,152-Word 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 2097152词位动态随机存储器:快速页面模式型与江

File Size 212.51K  /  16 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM51V17805F-70TS-K
OCR Text ...buffer turn- off delay time t rez 0 13 0 15 0 20 ns 7,8 oe to data output buffer turn-off delay time t oez 0 13 0 15 0 20 ns 7 we to data output buffer turn- off delay time t wez 0 13 0 15 0 20 ns 7 transition time t t 1 50...
Description 2,097,152-Word 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

File Size 231.56K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM366F883BK2 KMM366F803BK2
OCR Text ...urn off delay time from ras t rez 3 13 3 13 ns 6,11 output buffer turn off delay time from w t wez 3 13 3 13 ns 6,13 w to data delay t wed 15 15 ns 13 oe to cas hold time t och 5 5 ns cas hold time to oe t cho 5 5 ns oe precharge...
Description 8M x 64 DRAM DIMM(8M x 64 动RAM模块)

File Size 416.71K  /  20 Page

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    Oki Electric Industry Co., Ltd.
Part No. MSC23V13258D-60BS2
OCR Text ...ut buffer turn-off delay time t rez 013015020ns7, 8 /oe to data output buffer turn-off delay time t oez 013015020ns7 /we to data output buffer turn-off delay time t wez 013015020ns7 transition time t t 150150150ns3 refresh period t ref -16-...
Description 1M X 32 EDO DRAM MODULE, 60 ns, DMA100 DIMM-100

File Size 81.58K  /  10 Page

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    Samsung Semiconductor Co., Ltd.
Part No. KMM374F1680BK3
OCR Text ...ffer turn off delay from ras t rez 3 13 3 13 ns 6,10 output buffer turn off delay from w t wez 3 13 3 13 ns 6 w to data delay t wed 15 15 ns oe to cas hold time t och 5 5 ns cas hold time to oe t cho 5 5 ns oe precharge time t oep ...
Description 16M x 72 DRAM DIMM(16M x 72 动RAM模块) 1,600 × 72的DRAM内存,600 × 72动态内存模块)

File Size 405.57K  /  21 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM511666CL-XXTS-K MSM511666C-XXTS-K MSM511666CL-70TS-K
OCR Text ... hprwc t rac t cac t aa t cpa t rez t t t rp t ras t rasp t rsh t cas t csh t rcd t rad t crp t asr t rah t asc t cah t ral t oea t oez t ref t roh t rhcp t clz t cp t ar t ref msm511666 c/cl-70 msm511666 c/cl-60 ns ns ns ns ns ns ns ns ns ...
Description 65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) 65,536字16位动态随机存储器:快速页面模式型江户(字节写

File Size 241.86K  /  16 Page

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    Samsung Semiconductor Co., Ltd.
Part No. KMM53616004CK
OCR Text ...ffer turn off delay from ras t rez 3 13 3 15 ns 6,12 output buffer turn off delay from w t wez 3 13 3 15 ns 6 w to data delay t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2....
Description 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4

File Size 448.31K  /  21 Page

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