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rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 625 Search Time::3.219ms
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				ADPOW[Advanced Power Technology]
Part No.	APT10045B2LL APT10045LLL
OCR Text	... DV NF A I 112 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 23 92 1.3 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.81K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT20M18LVFR APT20M18B2VFR
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 100 400 1.3 5 (VGS ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 2...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL066HD4.3 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 200V 100A 0.018 Ohm
File Size	39.91K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT20M18LVR APT20M18B2VR
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 5 ns MAX uNIT Amps Volts ns C 100 400 1.3 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 2...
Description	ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- uL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.018 Ohm
File Size	38.79K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG32N60E2
OCR Text	...I WOFF RJC L = 500H, IC = IC90, RG = 25, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES TC = +25oC TC = +125oC TC = +25oC TC = +125oC TC = +25oC MI...122 HGTG32N60E2 Typical Performance Curves (Continued) 1.5 VGE = 15V, RG = 50 VGE = 10V, RG = 50...
Description	32A/ 600V N-Channel IGBT 32A, 600V N-Channel IGBT
File Size	32.99K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40FD2
OCR Text	... 27A, VCC = 480V 480 VGE = 15V, RG = 10 320 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 6.8 -- ...122 To Order Previous Datasheet Index Next Data Sheet IRGPC40FD2 100 100 VR = 200...
Description	INSuLATED GATE BIPOLAR TRANSISTOR WITH uLTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
File Size	381.33K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK170N10 IXFN170N10
OCR Text	... 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G V/ns 600 W C C V~ V~ D G = ...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	144.23K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLR3410 IRLu3410 u3410 IRLR_u3410 IRLR/u3410
OCR Text	... VDD = 50V --- ID = 9.0A ns --- RG = 6.0, VGS = 5.0V --- RD = 5.5, See Fig. 10 Between lead, --- nH 6mm (0.25in.) G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D S Source-Drai...
Description	HEXFET? Power MOSFET 100V Single N-channel HexFET Power MOSFET in a D-pak Package
File Size	154.72K / 10 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFT16N90Q IXFH16N90Q IXFK16N90Q
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 900 900 20 30 16 64 16 45 1.5 5 360 -55 ... +150 150 -55 ... +150 V V V...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
File Size	71.33K / 2 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXTK180N15
OCR Text	...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum ratings 150 150 20 30 180 75 720 90 64 3.0 5 560 -55 ... +150 150 -55 ... +150 V...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	High Current MegaMOSTMFET 180 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
File Size	84.53K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK3142
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK3142 Electrical Characteristics (Ta = 25C) Item Symbol Min 30 -- -- 1.0 -- -- \|yfs\| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 45 -- -- -- -- -- -- -- -- -- -- -- -- Typ --...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	49.43K / 10 Page	View it Online	Download Datasheet

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