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  rg-180 u Datasheet PDF File

For rg-180 u Found Datasheets File :: 4044    Search Time::1.687ms    
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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...VDD = 15V --- ID = 24.8A ns --- RG = 0.6 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol E...180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...180 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 28A, VGS = 0V --- 210 320 ns TJ = 25C, IF = ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transf...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...4V VGS = 10V VDD = 28V ID = 75A RG = 2.6 VGS = 10V e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = ...180 ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Ch...
Description AuTOMOTIVE MOSFET

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...180 TJ , Junction Temperature ( C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transf...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AuTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...180 TJ , Junction Temperature ( C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transf...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...VDD = -28V --- ID = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...DD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C ) Fig 3. T...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...180 A -V G S , G ate -to-Source Volta ge (V ) T J , J unc tion T em perature (C ) Fig 3....
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...180 A -V G S , G ate -to-Source Volta ge (V ) T J , Junction T em perature (C ) Fig 3. T...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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