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  rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7268    Search Time::1.547ms    
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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...VDD = 10V --- ID = 28.4A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol E...400 Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 300 200 15V V (B R )D S S...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...- VDD = 10V --- ID = 28A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol E...400 VDS L D R IV E R BOTTOM ID 12A 24A 28A RG 20V tp D .u .T IA S + V - DD...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...VDD = 15V --- ID = 24.8A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol E...400 Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 300 200 15V V (B R )D S S...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ... 171 --- ID = 30A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1064 --- pF VDS = 16V --- 109 --- = 1.0MHz Av...400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) Fig 12c. Maximum ...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...400 0 .0 1 Fig 12a. unclamped Inductive Test Circuit 200 0 V D D = 25 V 25 50 75 100...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...- VDD = 10V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz Avalanche Characteristics Symbol EA...400 200 0 25 50 75 100 125 VDS L DRIVER ID 13A 19A 30A RG 20V D.u.T IAS tp + ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...4V VGS = 10V VDD = 28V ID = 75A RG = 2.6 VGS = 10V e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = ...400 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) I AS Fig 12b. unclamp...
Description AuTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 140A 300 200 100 0 25 50 75 100 125 1...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AuTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 140A 300 200 100 0 25 50 75 100 125 1...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...400 300 15V 200 Fig 12a. unclamped Inductive Test Circuit 100 0 V D D = -2 5V ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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