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    STF26NM60N-H

意法半导
STMicroelectronics
Part No. sTF26NM60N-h
OCR Text sTF26NM60N-h N-channel 600 V, 0.135 20 A MDmeshTM II Power MOsFET , in TO-220FP Features Type sTF26NM60N-h VDss 600 V RDs(on) max < 0.165 ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate inpu...
Description Low gate input resistance

File Size 678.92K  /  12 Page

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    AP04N70BS-H-HF

Advanced Power Electronics Corp.
Part No. AP04N70Bs-h-hF
OCR Text ...h speed switching circuits. g d s g d s to-263(s) electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test...h-hf a p04n70bs-h-hf fig 1. typical output characteristics fig 2. typi...
Description N-ChANNEL ENhANCEMENT MODE POWER MOsFET

File Size 55.38K  /  4 Page

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    TM130CZ-H TM130CZ-M TM130DZ-H TM130DZ-M TM130PZ-H TM130PZ-M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM130CZ-h TM130CZ-M TM130DZ-h TM130DZ-M TM130PZ-h TM130PZ-M
OCR Text ...Ratings 205 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g single-phase, half-wave 180 conduction, TC=85C One half cycle at ...h hIGh POWER GENERAL UsE INsULATED TYPE PERFORMANCE CURVEs MAXIMUM ON-sTATE ChARACTERIsTIC RAT...
Description hIGh POWER GENERAL UsE INsULATED TYPE

File Size 65.47K  /  5 Page

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    TM130EZ-H TM130EZ-M TM130GZ-H TM130GZ-M TM130RZ-H TM130RZ-M

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM130EZ-h TM130EZ-M TM130GZ-h TM130GZ-M TM130RZ-h TM130RZ-M
OCR Text ...Ratings 205 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g single-phase, half-wave 180 conduction, TC=85C One half cycle at ...h hIGh POWER GENERAL UsE INsULATED TYPE MAXIMUM RATINGs Item Thyristor Diode -- -- -- -- VRRM ...
Description 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
hIGh POWER GENERAL UsE INsULATED TYPE

File Size 69.56K  /  5 Page

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    AP04N70BI-H-HF AP04N70BI-H-HF14 AP04N70BI-H-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP04N70BI-h-hF AP04N70BI-h-hF14 AP04N70BI-h-hF-14
OCR Text ...linear derating factor 0.26 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, rugged...h-hf 2 a p04n70bi-h-hf fig 1. typical output characteristics fig 2. typica...
Description N-ChANNEL ENhANCEMENT MODE POWER MOsFET
4 A, 700 V, 2.4 ohm, N-ChANNEL, si, POWER, MOsFET, TO-220AB
Fast switching Characteristic

File Size 105.91K  /  6 Page

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    TM15T3A-H TM15T3A-M

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM15T3A-h TM15T3A-M
OCR Text ...T Ks Gs KR GR R 20 KR s P 62 45 Ks GR KT Gs P GT R s T N 20 T N 61.7 4-5.5 74 86 5-M5 Tab#110, t=0....h MEDIUM POWER GENERAL UsE INsULATED TYPE ABsOLUTE MAXIMUM RATINGs symbol VRRM VRsM VR (DC) VD...
Description MEDIUM POWER GENERAL UsE INsULATED TYPE

File Size 54.93K  /  4 Page

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    TBB1004DMTL-H TBB100411

Renesas Electronics Corporation
Part No. TBB1004DMTL-h TBB100411
OCR Text ...si de d i a 10mm , 2 t urn s l 2 : e name l ed co pp er wi re ,i n si de d i a 10mm , 2 t urn s r f c : e name l ed ...h anne l po w er d issip at i on pc h* (m w ) am bi ent t em p erature t a ( c) ma xi ...
Description Twin Built in Biasing Circuit MOs FET IC VhF/UhF RF Amplifier

File Size 113.42K  /  9 Page

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    TBB1005EMTL-H TBB100511

Renesas Electronics Corporation
Part No. TBB1005EMTL-h TBB100511
OCR Text ...si de d i a 10mm , 2 t urn s l 2 : e name l ed co pp er wi re ,i n si de d i a 10mm , 2 t urn s r f c : e name l ed ...h anne l po w er d issip at i on pc h* (m w ) am bi ent t em p erature t a ( c) ma x...
Description Twin Built in Biasing Circuit MOs FET IC VhF/UhF RF Amplifier

File Size 113.51K  /  9 Page

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    HYMD512M646ALFS8-H HYMD512M646ALFS8-J HYMD512M646ALFS8-K HYMD512M646ALFS8-D43

Hynix Semiconductor
Part No. hYMD512M646ALFs8-h hYMD512M646ALFs8-J hYMD512M646ALFs8-K hYMD512M646ALFs8-D43
OCR Text ...m/k/h/l series incorporates spd(s erial presence detect). serial presence detect func- tion is implemented via a serial 2,048- bit eeprom. the first 128 by tes of serial pd data are programmed by hynix to identify dimm type, capacity and o...
Description DDR sDRAM - sO DIMM 1GB

File Size 333.85K  /  20 Page

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    2SK1070PICTL-H 2SK1070PIDTL-H 2SK1070PIETL-H 2SK107011

Renesas Electronics Corporation
Part No. 2sK1070PICTL-h 2sK1070PIDTL-h 2sK1070PIETL-h 2sK107011
OCR Text ...d e a aa b xsa m eh e a a 2 a 1 s b a-a section c qc l l 1 l p a 3 pattern of terminal position areas i 1 b 2 e e 1 a a 1 a 2 a 3 b c d e e h e l l 1 l p x b 2 e 1 i 1 q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in m...
Description silicon N-Channel Junction FET

File Size 81.96K  /  6 Page

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